EM7162SP16AW Series
1Mx16 Multiplexed STRAM
Document Title
1M x 16Bit Multiplexed Single Transistor RAM
Revision History
Revision No.
0.0
History
Initial Draft
Draft Date
Jan. 1 , 2005
Remark
Preliminary
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Emerging Memory & Logic Solutions Inc.
Zip Code : 690-717
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM7162SP16AW Series
1Mx16 Multiplexed STRAM
1M x16 Bit Multiplexed Single Transistor RAM
FEATURES
- Process Technology : 0.13µm CMOS process
-
Organization :1M x16
-
Power Supply Voltage : 1.7~1.9V
- Multiplexed address and data bus
-
Three state outputs
-
RMS and Auto TCSR for power saving
GENERAL WAFER SPECIFICATIONS
-
Deep trench process
-
3 Metal layers including local inter-connection
-
Typical Pad Size : 73.0um x 70.0um
-
Wafer diameter : 8-inch
PAD DESCRIPTION
Name
/CS
/OE
/WE
/AVD
ADQ
i
A
i
Function
Chip select inputs
Output enable input
Write enable input
Address valid input
Address/Data In-out
Address inputs
Name
/LB
/UB
VCC
VCCQ
Function
Lower byte (ADQ
0~7
)
Upper byte (ADQ
8~15
)
Power supply
I/O Power supply
VSS(Q) Ground
NC
No connection
FUNCTION BLOCK DIAGRAM
/AVD
/CS
/UB
/LB
/WE
/OE
Self-Refresh
CONTROL
CONTROL
LOGIC
COLUMN SELECT
ROW SELECT
A16~A19
ADDRESS
DECODER
Memory Array
1M X 16
ADQ0~
ADQ15
ADDRESS/DATA
Multiplexer
Din/Dout BUFFER
I/O CIRCUIT
2
EM7162SP16AW Series
1Mx16 Multiplexed STRAM
ABSOLUTE MAXIMUM RATINGS
1)
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage Temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
, V
CCQ
P
D
T
STG
T
A
Minimum
-0.2 to V
CCQ
+0.3V
-0.2
2)
to 2.5V
1.0
-65 to 150
-25 to 85
Unit
V
V
W
o
C
o
C
1.
Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Undershoot at power-off : -1.0V in case of pulse width < 20ns
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
L
L
L
OE
X
H
X
H
L
H
L
L
L
H
H
H
WE
X
H
X
L
H
H
H
H
H
L
L
L
LB
X
X
H
H
H
H
L
H
L
L
H
L
UB
X
X
H
H
H
H
H
L
L
H
L
L
AVD
X
H
X
H
H
L
H
H
H
H
H
H
ADQ
0~15
High-Z
High-Z
High-Z
Data In
Data Out
Add. Input
Data Out
Data Out
Data Out
Data In
Data In
Data In
A
16
~A
19
X
X
X
X
X
Add. Input
X
X
X
X
X
X
Mode
Deselected
Output Disabled
Output Disabled
Configuration Register
Write Access
Configuration Register
Read Access
Address Input
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Stand by
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Note: X means don’t care. (Must be low or high state)
3
EM7162SP16AW Series
1Mx16 Multiplexed STRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
Symbol
V
CC
V
CCQ
V
SS
, V
SSQ
V
IH
V
IL
Min
1.7
1.7
0
V
CCQ
- 0.4
-0.2
3)
Typ
1.8
1.8
0
-
-
Max
1.9
1.9
0
V
CCQ
+ 0.2
2)
0.4
Unit
V
V
V
V
V
T
A
= -25 to 85
o
C, otherwise specified
Overshoot: V
CC
+1.0 V in case of pulse width < 20ns
Undershoot: -1.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
V
OL
V
OH
I
SB1
Test Conditions
V
IN
=V
SS
to V
CCQ
, V
CC=
V
CCmax
CS=V
IH
or OE=V
IH
or WE=V
IL
,
V
IO
=V
SS
to V
CCQ
, V
CC=
V
CCmax
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS<0.2V, V
IN
<0.2V or V
IN
>V
CCQ
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS=V
IL
, V
IN
=V
IL
or V
IH
I
OL
= 0.1mA, V
CC=
V
CCmin
I
OH
= -0.1mA, V
CC=
V
CCmin
CS>V
CCQ
-0.2V, Other inputs = 0 ~ V
CCQ
(Typ. condition : V
CC
=1.8V @ 25
o
C)
(Max. condition : V
CC
=1.9V @ 85
o
C)
Min
-1
-1
-
-
-
V
CCQ
-0.1
Typ
-
-
-
-
-
-
Max
1
1
3
25
0.1
-
Unit
uA
uA
mA
mA
V
V
Standby Current (CMOS)
LL
-
-
60
uA
1. Maximum Icc specifications are tested with V
CC
= V
CCmax.
4
EM7162SP16AW Series
1Mx16 Multiplexed STRAM
AC OPERATING CONDITIONS
Test Conditions (Test
Load and Test Input/Output Reference)
Input Pulse Level : 0.2V to V
CCQ
-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : V
CCQ
/2
Output Load (See right) : CL
1)
= 30pF
1. Including scope and Jig capacitance
Dout
CL
1)
AC CHARACTERISTICS
(V
cc
= 1.7 to 1.9V, Gnd = 0V, T
A
= -25C to +85
o
C)
Parameter List
AVD Low pulse
Common
Address setup to AVD rising edge
Address hold from AVD rising edge
Chip enable setup to AVD rising edge
AVD low to data valid time
Address access time
Chip enable to data output
Address disable to output enable
Output enable to valid output
Read
UB, LB enable to data output
UB, LB enable to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
UB, LB disable to high-Z output
Output disable to high-Z output
AVD low to end of write
Address valid to end of write
Chip enable to end of write
Write
Write pulse low
UB, LB valid to end of write
Data to write time overlap
Data hold from write time
Symbol
t
AVD
t
AVDS
t
AVDH
t
CSS
t
ACC1
t
ACC2
t
ACC3
t
ADOE
t
OE
t
UBLBA
t
BLZ
t
OLZ
t
HZ
t
BHZ
t
OHZ
t
ACW1
t
ACW2
t
ACW3
t
WRL
t
BW
t
DW
t
DH
Speed
Min
15
15
5
7
-
-
-
0
-
-
5
5
-
-
-
70
70
70
45
50
25
0
Max
1000
-
-
-
70
70
70
-
25
25
-
-
15
15
15
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
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