NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
| BC171 | BC173 | BC172 | |
|---|---|---|---|
| Description | NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR | NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR | NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR |
| Maker | - | Micro Electronics | Micro Electronics |
| package instruction | - | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | - | unknown | unknow |
| ECCN code | - | EAR99 | EAR99 |
| Maximum collector current (IC) | - | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | - | 25 V | 25 V |
| Configuration | - | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | - | 125 | 125 |
| JEDEC-95 code | - | TO-92 | TO-92 |
| JESD-30 code | - | O-PBCY-W3 | O-PBCY-W3 |
| Number of components | - | 1 | 1 |
| Number of terminals | - | 3 | 3 |
| Maximum operating temperature | - | 125 °C | 125 °C |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | ROUND | ROUND |
| Package form | - | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | - | NPN | NPN |
| Maximum power dissipation(Abs) | - | 0.2 W | 0.35 W |
| Certification status | - | Not Qualified | Not Qualified |
| surface mount | - | NO | NO |
| Terminal form | - | WIRE | WIRE |
| Terminal location | - | BOTTOM | BOTTOM |
| transistor applications | - | AMPLIFIER | AMPLIFIER |
| Transistor component materials | - | SILICON | SILICON |
| Nominal transition frequency (fT) | - | 150 MHz | 150 MHz |
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