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BC172

Description
NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size185KB,2 Pages
ManufacturerMicro Electronics
Websitehttp://www.microelectr.com.hk
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BC172 Overview

NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR

BC172 Parametric

Parameter NameAttribute value
MakerMicro Electronics
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)125
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

BC172 Related Products

BC172 BC171 BC173
Description NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
Maker Micro Electronics - Micro Electronics
package instruction CYLINDRICAL, O-PBCY-W3 - CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknow - unknown
ECCN code EAR99 - EAR99
Maximum collector current (IC) 0.1 A - 0.1 A
Collector-emitter maximum voltage 25 V - 25 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 125 - 125
JEDEC-95 code TO-92 - TO-92
JESD-30 code O-PBCY-W3 - O-PBCY-W3
Number of components 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 125 °C - 125 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - ROUND
Package form CYLINDRICAL - CYLINDRICAL
Polarity/channel type NPN - NPN
Maximum power dissipation(Abs) 0.35 W - 0.2 W
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal form WIRE - WIRE
Terminal location BOTTOM - BOTTOM
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 150 MHz - 150 MHz
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