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BC212L

Description
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerMicro Electronics
Websitehttp://www.microelectr.com.hk
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BC212L Overview

COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR

BC212L Parametric

Parameter NameAttribute value
MakerMicro Electronics
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

BC212L Related Products

BC212L BC182L BC212
Description COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR
Maker Micro Electronics Micro Electronics Micro Electronics
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 110 100
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 140 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP NPN PNP
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.35 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 150 MHz 100 MHz
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