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SVD202

Description
X BAND, 11 pF, 27 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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SVD202 Overview

X BAND, 11 pF, 27 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE

Ordering number : EN5769
Hyperabrupt Junction Type GaAs Varactor Diode
SVD202
X Band VCO, PLO
Features
• High Q.
• High capacitance ratio.
Package Dimensions
unit: mm
1274
[SVD202]
1 : Cathode
2 : Anode
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Peak Reverse Voltage
Average Rectified Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Mounting Temperature
Symbol
V
rm
I
fm
P
D
Tj
Tstg
Tm
Conditions
Ratings
30
50
500
150
–65 to +150
230/10s
Unit
V
mA
mW
°C
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Forward Voltage
Reverse Voltage
Reverse Current
Interterminal Capacitance
Capacitance Ratio
Symbol
V
F
V
R
I
R
C
t0V
C
j0V
/ C
j25V
I
F
=10mA
I
R
=10µA
V
R
=25V
V
R
=0V, f=1MHz
V
R
=0V, 25V, f=1MHz
9
11
11
14
–27
100
Conditions
Ratings
min
typ
max
1.4
Unit
V
V
nA
pF
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
90597GI (KOTO) No.5769-1/2

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Index Files: 1163  1987  504  1324  1346  24  40  11  27  28 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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