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BC328

Description
500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BC328 Overview

500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC328 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)260 MHz
VCEsat-Max0.7 V
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC327/D
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC327,-16,-25
BC328,-16,-25
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC327
–45
–50
–5.0
–800
625
5.0
1.5
12
– 55 to +150
BC328
–25
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = –100
µA,
IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
A, IC = 0)
Collector Cutoff Current
(VCB = –30 V, IE = 0)
(VCB = –20 V, IE = 0)
Collector Cutoff Current
(VCE = –45 V, VBE = 0)
(VCE = –25 V, VBE = 0)
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0)
BC327
BC328
ICES
BC327
BC328
IEBO
–100
–100
–100
nAdc
V(BR)CEO
BC327
BC328
V(BR)CES
BC327
BC328
V(BR)EBO
ICBO
–100
–100
nAdc
–50
–30
–5.0
Vdc
nAdc
–45
–25
Vdc
Vdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1

BC328 Related Products

BC328 BC327 BC327-16 BC327-25 BC328-16 BC328-25
Description 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP general purpose transistor PNP general purpose transistor PNP general purpose transistor Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 TRANSISTOR,BJT,PNP,25V V(BR)CEO,800MA I(C),TO-92
Reach Compliance Code unknow unknow unknow unknow unknown unknow
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 25 V 45 V 45 V 45 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 100 160 100 160
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power consumption environment 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 260 MHz 260 MHz 260 MHz 260 MHz 260 MHz 260 MHz
VCEsat-Max 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V 0.7 V
Is it Rohs certified? incompatible incompatible - incompatible incompatible -
Maker Motorola ( NXP ) Motorola ( NXP ) - Motorola ( NXP ) - Motorola ( NXP )
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 - CYLINDRICAL, O-PBCY-T3
Maximum power dissipation(Abs) - 0.625 W 0.625 W 0.625 W 0.625 W 0.625 W

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