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IMBD4448-7

Description
Rectifier Diode, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size94KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

IMBD4448-7 Overview

Rectifier Diode, 1 Element, Silicon

IMBD4448-7 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum reverse current2.5 µA
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL

IMBD4448-7 Related Products

IMBD4448-7 IMBD4148-7
Description Rectifier Diode, 1 Element, Silicon Rectifier Diode, 1 Element, Silicon, SOT-23, 3 PIN
Maker Diodes Incorporated Diodes Incorporated
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.35 W 0.35 W
Certification status Not Qualified Not Qualified
Maximum reverse current 2.5 µA 2.5 µA
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL

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