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ZVP3306E

Description
0.16A, 60V, 14ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14
CategoryDiscrete semiconductor    The transistor   
File Size303KB,8 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZVP3306E Overview

0.16A, 60V, 14ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14

ZVP3306E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionIN-LINE, R-PDIP-T14
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDIP-T14
JESD-609 codee0
Number of components4
Number of terminals14
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.85 W
Maximum pulsed drain current (IDM)1.6 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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