STW33N20
N - CHANNEL ENHANCEMENT MODE
POWER MOSFET
TYPE
ST W33N20
s
s
s
s
s
s
s
s
V
DSS
200 V
R
DS(on)
< 0.085
Ω
I
D
33 A
TYPICAL R
DS(on)
= 0.073
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
150
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
TO-247
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC CONVERTERS & DC-AC INVERTERS
s
TELECOMMUNICATION POWER SUPPLIES
s
INDUSTRIAL MOTOR DRIVES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
t ot
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
T
stg
T
j
St orage Temperature
Max. Operating Junction Temperature
o
Value
200
200
±
20
33
20
132
180
1.44
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/ C
o
o
o
C
C
(•) Pulse width limited by safe operating area
October 1997
1/9
STW33N20
THERMAL DATA
R
t hj-ca se
R
t hj- amb
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symb ol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Max Valu e
33
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
V
(BR)DSS
I
DSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I
D
= 250
µA
V
GS
= 0
Min.
200
10
100
±
100
Typ .
Max.
Un it
V
µA
µA
nA
Zero G ate Voltage
V
DS
= Max Rating
Drain Current (V
GS
= 0) V
DS
= Max Rating
o
C
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
T
c
= 100
I
GSS
ON (∗)
Symb ol
V
GS(th)
R
DS( on)
I
D(o n)
Parameter
Gate
Voltage
Threshold V
DS
= V
GS
Test Cond ition s
I
D
= 250
µA
I
D
= 16 A
33
Min.
2
Typ .
3
0.073
Max.
4
0.085
Un it
V
Ω
A
Static Drain-source On V
GS
= 10 V
Resistance
On State Drain Current V
DS
> I
D(on)
x R
DS(on) max
V
GS
= 10 V
DYNAMIC
Symb ol
g
fs
(∗)
C
iss
C
oss
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Test Cond ition s
V
DS
> I
D(on)
x R
DS(on) max
V
DS
= 25 V
f = 1 MHz
I
D
= 16 A
V
GS
= 0
Min.
10
Typ .
22
3500
550
120
4500
700
160
Max.
Un it
S
pF
pF
pF
2/9
STW33N20
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symb ol
t
d(on)
t
r
(di/dt)
on
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Test Cond ition s
V
DD
= 100 V I
D
= 16 A
V
GS
= 10 V
R
G
= 4.7
Ω
(see test circuit, figure 3)
V
DD
= 160 V I
D
= 33 A
V
GS
= 10 V
R
G
= 4.7
Ω
(see test circuit, figure 5)
V
DD
= 160 V
I
D
= 33 A
V
GS
= 10 V
Min.
Typ .
25
50
800
Max.
40
70
Un it
ns
ns
A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
110
17
50
160
nC
nC
nC
SWITCHING OFF
Symb ol
t
r(Vof f)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
V
DD
= 160 V I
D
= 33 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see test circuit, figure 5)
Min.
Typ .
30
30
60
Max.
45
45
90
Un it
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 10 A
V
GS
= 0
400
5.6
28
Test Cond ition s
Min.
Typ .
Max.
33
132
1.6
Un it
A
A
V
ns
µC
A
I
SD
= 33 A di/dt = 100 A/µs
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
STW33N20
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/9
STW33N20
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
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