Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
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use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Team Nexperia
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
High current (max. 500 mA)
•
High voltage (max. 200 V).
APPLICATIONS
•
High-voltage switching in telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
PNP complements: PMSTA92 and PMSTA93.
MARKING
TYPE NUMBER
PMSTA42
PMSTA43
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
Fig.1
MARKING CODE
(1)
∗1D
∗1E
1
Top view
handbook, halfpage
PMSTA42; PMSTA43
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
2
MAM062
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
PMSTA42
PMSTA43
V
CEO
collector-emitter voltage
PMSTA42
PMSTA43
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
300
200
6
100
200
100
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
−
300
200
V
V
MIN.
MAX.
UNIT
1999 May 21
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
PMSTA42
PMSTA43
I
EBO
emitter cut-off current
PMSTA42
PMSTA43
h
FE
DC current gain
I
C
= 0; V
EB
= 6 V
I
C
= 0; V
EB
= 4 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 30 mA; V
CE
= 10 V; note 1
V
CEsat
C
re
collector-emitter saturation voltage
feedback capacitance
PMSTA42
PMSTA43
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
transition frequency
I
C
= 20 mA; I
B
= 2 mA
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 160 V
CONDITIONS
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMSTA42; PMSTA43
VALUE
625
UNIT
K/W
MIN.
−
−
−
−
25
40
40
−
−
−
MAX.
100
100
100
100
−
−
−
500
3
4
−
UNIT
nA
nA
nA
nA
mV
pF
pF
MHz
I
C
= i
c
= 0; V
CB
= 20 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz 50
1999 May 21
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMSTA42; PMSTA43
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 May 21
4
Embedded System
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