TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current
20 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 1 mA
This series is
obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
K
A
G
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
TIC108M
TIC108N
TIC108S
TIC108D
SYMBOL
V
DRM
VALUE
400
600
700
800
400
600
700
800
5
3.2
0.2
1.3
-40 to +110
-40 to +125
230
0.3
20
V
A
A
A
A
V
UNIT
Repetitive peak reverse voltage
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
(see Note 3)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
Peak positive gate current (pulse width
≤
300
µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Surge on-state current (see Note 4)
Peak gate power dissipation (pulse width
≤
300
µs)
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
.
E
T
E
L
O
S
B
O
TIC108M
TIC108N
TIC108S
TIC108D
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I
GM
P
G(AV)
T
stg
T
L
T
C
P
GM
W
°C
°C
°C
W
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
I
RRM
I
GT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
V
R
= rated V
RRM
V
AA
= 12 V
V
AA
= 12 V
t
p(g)
≥
20 µs
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
I
H
Holding current
Initiating I
T
= 20 mA
V
AA
= 12 V
Initiating I
T
= 20 mA
V
T
dv/dt
NOTE
On-state voltage
Critical rate of rise of
off-state voltage
I
T
= 5 A
V
D
= rated V
D
(see Note 6)
R
GK
= 1 kΩ
T
C
= 110°C
R
GK
= 1 kΩ
TEST CONDITIONS
R
GK
= 1 kΩ
I
G
= 0
R
L
= 100
Ω
R
L
= 100
Ω
R
GK
= 1 kΩ
R
L
= 100
Ω
R
GK
= 1 kΩ
R
L
= 100
Ω
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
C
= - 40°C
T
C
= 110°C
0.4
0.2
3.5
2
1.3
20
15
mA
10
1.7
V
V/µs
0.6
T
C
= 110°C
T
C
= 110°C
t
p(g)
≥
20
µs
T
C
= - 40°C
0.2
0.5
MIN
TYP
MAX
400
1
1
1.2
1
V
UNIT
µA
mA
mA
6: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
E
T
E
L
O
S
B
O
PARAMETER
MIN
TYP
MAX
3.5
62.5
UNIT
°C/W
°C/W
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
THERMAL INFORMATION
AVERAGE ANODE ON-STATE CURRENT
DERATING CURVE
I
T(AV)
- Maximum Average Anode Forward Current - A
6
Continuous DC
5
TI23AA
MAX ANODE POWER DISSIPATED
vs
ANODE ON-STATE CURRENT
100
T
J
= 110 °C
P
A
- Max Anode Power Dissipated - W
TI23AB
4
Φ
= 180°
3
10
2
0°
1
180°
Φ
Conduction
Angle
0
30
40
50
60
T
C
- Case Temperature - °C
Figure 1.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
100
T
C
≤
80°C
I
TM
- Peak Half-Sine-Wave Current - A
No Prior Device Conduction
Gate Control Guaranteed
10
R
θJC(t)
- Transient Thermal Resistance - °C/W
E
T
E
L
O
S
B
O
70
80
90
100
110
1
1
10
TI23AC
100
I
T
- Anode Forward Current - A
Figure 2.
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
TI23AD
10
1
1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
100
0·1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
100
Figure 3.
Figure 4.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
10
V
AA
= 12 V
I
GT
- Gate Trigger Current - mA
t
p(g)
≥
20 µs
V
GT
- Gate Trigger Voltage - V
R
L
= 100
Ω
0.7
TC23AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
0.8
TC23AB
V
AA
= 12 V
R
L
= 100
Ω
R
GK
= 1 kΩ
t
p(g)
≥
20 µs
0.6
1
0.5
0·1
-60
-40
-20
0
20
T
C
- Case Temperature - °C
Figure 5.
HOLDING CURRENT
vs
10
CASE TEMPERATURE
V
AA
= 12 V
R
GK
= 1 kΩ
I
H
- Holding Current - mA
Initiating I
T
= 20 mA
V
TM
- Peak On-State Voltage - V
E
T
E
L
O
S
B
O
0.4
40
60
80
100
120
0.3
-50
-25
0
25
50
75
100
125
T
C
- Case Temperature - °C
Figure 6.
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
TC23AE
TC23AD
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
T
C
= 25 °C
t
p
= 300 µs
Duty Cycle
≤
2 %
1
0.1
-50
-25
0
25
50
75
100
125
0.8
0·1
1
I
TM
- Peak On-State Current - A
10
T
C
- Case Temperature - °C
Figure 7.
Figure 8.
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
51mcu
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