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TIC108S

Description
Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size158KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Download Datasheet Parametric Compare View All

TIC108S Overview

Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3

TIC108S Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionANODE
ConfigurationSINGLE
Maximum DC gate trigger current1 mA
Maximum DC gate trigger voltage1 V
Maximum holding current10 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current0.4 mA
On-state non-repetitive peak current20 A
Number of components1
Number of terminals3
Maximum on-state current3200 A
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current5 A
Off-state repetitive peak voltage700 V
Repeated peak reverse voltage700 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
5 A Continuous On-State Current
20 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 1 mA
This series is
obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
K
A
G
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
TIC108M
TIC108N
TIC108S
TIC108D
SYMBOL
V
DRM
VALUE
400
600
700
800
400
600
700
800
5
3.2
0.2
1.3
-40 to +110
-40 to +125
230
0.3
20
V
A
A
A
A
V
UNIT
Repetitive peak reverse voltage
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
(see Note 3)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
Peak positive gate current (pulse width
300
µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Surge on-state current (see Note 4)
Peak gate power dissipation (pulse width
300
µs)
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
.
E
T
E
L
O
S
B
O
TIC108M
TIC108N
TIC108S
TIC108D
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I
GM
P
G(AV)
T
stg
T
L
T
C
P
GM
W
°C
°C
°C
W
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1

TIC108S Related Products

TIC108S TIC108D-S TIC108D TIC108M TIC108N
Description Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 700V V(DRM), 700V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3 thyristor scr 400v 5A Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3 Silicon Controlled Rectifier, 5A I(T)RMS, 3200mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, PLASTIC PACKAGE-3
Is it Rohs certified? incompatible conform to incompatible incompatible incompatible
Maker Bourns Bourns Bourns Bourns Bourns
Reach Compliance Code unknown unknow unknown unknown unknown
Maximum DC gate trigger current 1 mA 1 mA 1 mA 1 mA 1 mA
Maximum DC gate trigger voltage 1 V 1 V 1 V 1 V 1 V
Maximum holding current 10 mA 10 mA 10 mA 10 mA 10 mA
Maximum leakage current 0.4 mA 0.4 mA 0.4 mA 0.4 mA 0.4 mA
On-state non-repetitive peak current 20 A 20 A 20 A 20 A 20 A
Maximum on-state current 3200 A 3200 A 3200 A 3200 A 3200 A
Maximum operating temperature 110 °C 110 °C 110 °C 110 °C 110 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 700 V 400 V 400 V 600 V 800 V
surface mount NO NO NO NO NO
Trigger device type SCR SCR SCR SCR SCR
Parts packaging code TO-220AB - TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 - 3 3 3
Shell connection ANODE - ANODE ANODE ANODE
Configuration SINGLE - SINGLE SINGLE SINGLE
JEDEC-95 code TO-220AB - TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 - 1 1 1
Number of terminals 3 - 3 3 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 5 A - 5 A 5 A 5 A
Repeated peak reverse voltage 700 V - 400 V 600 V 800 V
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - SINGLE SINGLE SINGLE
ECCN code - EAR99 - EAR99 EAR99
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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