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BS616LV1615FC70

Description
Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
Categorystorage    storage   
File Size254KB,8 Pages
ManufacturerBrilliance
Download Datasheet Parametric Compare View All

BS616LV1615FC70 Overview

Standard SRAM, 1MX16, 70ns, CMOS, PBGA48

BS616LV1615FC70 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerBrilliance
package instructionFBGA, BGA48,6X8,30
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee0
memory density16777216 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply5 V
Certification statusNot Qualified
Minimum standby current1.5 V
Maximum slew rate0.09 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
1M X 16 bit
(Dual CE Pins)
DESCRIPTION
BS616LV1615
• Vcc operation voltage : 4.5~5.5V
• Very low power consumption :
Vcc = 5.0V C-grade: 113mA (@55ns) operating current
I -grade: 115mA (@55ns) operating current
C-grade: 90mA (@70ns) operating current
I -grade: 92mA (@70ns) operating current
15uA (Typ.) CMOS standby current
• High speed access time :
-55
55ns
-70
70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV1615 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 16 bits and
operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 15uA at 5.0V/25
o
C and maximum access time of 55ns at 5.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable(CE1)
, active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616LV1615 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1615 is available in 48-pin BGA package.
PRODUCT FAMILY
PRODUCT FAMILY
OPERATING
TEMPERATURE
+0
O
C to +70
O
C
-40
O
C to +85
O
C
Vcc
RANGE
4.5V ~ 5.5V
4.5V ~ 5.5V
SPEED
(ns)
55ns : 4.5~5.5V
70ns : 4.5~5.5V
POWER DISSIPATION
STANDBY
Operating
(I
CCSB1
, Max)
(I
CC
, Max)
PKG TYPE
Vcc=5V
Vcc=5V
55ns
Vcc=5V
70ns
BS616LV1615FC
BS616LV1615FI
55 / 70
55 / 70
110uA
220uA
113mA
115mA
90mA
92mA
BGA-48-0912
BGA-48-0912
PIN CONFIGURATIONS
1
A
B
C
D
E
F
G
H
LB
D8
D9
VSS
2
OE
UB
D10
D11
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
D1
D3
D4
D5
WE
A11
6
CE2
D0
D2
VCC
VSS
D6
D7
NC
BLOCK DIAGRAM
A4
A3
A2
A1
A0
A17
A16
A15
A14
A13
A12
Address
Input
Buffer
22
Row
Decoder
2048
Memory Array
2048 x 8192
8192
D0
16
Data
Input
Buffer
16
Column I/O
VCC
D14
D15
A 18
D12
D13
A19
.
A8
.
.
.
.
D15
CE2
CE1
WE
OE
UB
LB
Vcc
Vss
.
.
.
.
Write Driver
Sense Amp
512
Column Decoder
16
Data
Output
16
Buffer
18
Control
Address Input Buffer
A11 A10 A9 A8 A7 A6 A5 A18 A19
48-Ball CSP top View
Brilliance Semiconductor, Inc
. reserves the right to modify document contents without notice.
R0201-BS616LV1615
1
Revision 2.1
Jan.
2004

BS616LV1615FC70 Related Products

BS616LV1615FC70 BS616LV1615FI55 BS616LV1615FI70
Description Standard SRAM, 1MX16, 70ns, CMOS, PBGA48 Standard SRAM, 1MX16, 55ns, CMOS, PBGA48 Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
Maker Brilliance Brilliance Brilliance
package instruction FBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30
Reach Compliance Code unknown unknown unknown
Maximum access time 70 ns 55 ns 70 ns
I/O type COMMON COMMON COMMON
JESD-30 code R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
JESD-609 code e0 e0 e0
memory density 16777216 bit 16777216 bit 16777216 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16
Humidity sensitivity level 3 3 3
Number of terminals 48 48 48
word count 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C
organize 1MX16 1MX16 1MX16
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA FBGA FBGA
Encapsulate equivalent code BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 240 240 240
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
Minimum standby current 1.5 V 1.5 V 1.5 V
Maximum slew rate 0.09 mA 0.115 mA 0.092 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL
Terminal pitch 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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