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309U250P3

Description
300 A, 2500 V, SILICON, RECTIFIER DIODE, DO-205AB
CategoryDiscrete semiconductor    diode   
File Size101KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

309U250P3 Overview

300 A, 2500 V, SILICON, RECTIFIER DIODE, DO-205AB

309U250P3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionO-MUPM-H1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-205AB
JESD-30 codeO-MUPM-H1
JESD-609 codee0
Maximum non-repetitive peak forward current5330 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature180 °C
Minimum operating temperature-40 °C
Maximum output current300 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2500 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I2032/A
301U(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
Wide current range
High voltage ratings up to 2500V
High surge current capabilities
Stud cathode and stud anode version
300A
Typical Applications
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
Major Ratings and Characteristics
301U(R)
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
range
T
J
80 to 200
330
120
520
8250
8640
340
311
800 to 2000
- 40 to 180
250
300
120
470
6050
6335
183
167
2500
- 40 to 180
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
°C
case style
DO-205AB (DO-9)
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