STU10NC70Z
STU10NC70ZI
N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220
Zener-Protected PowerMESH™III MOSFET
TYPE
STU10NC70Z
STU10NC70ZI
s
s
s
s
s
s
V
DSS
700 V
700 V
R
DS(on)
<0.75Ω
<0.75Ω
I
D
9.4 A
9.4 A
TYPICAL R
DS
(on) = 0.58Ω
EXTREMELY HIGH dv/dt CAPABILITY
GATE-TO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
1
2
3
Max220
I-Max220
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
I
GS
V
ESD(G-S)
dv/dt(
q
)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
–65 to 150
150
(1)I
SD
≤9.4A,
di/dt
≤100A/µs,
V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*)Limited only by maximum temperature allowed
Value
STU10NC70Z
700
700
±25
9.4
5.9
37.6
160
1.28
±50
4
3
2000
9.4(*)
5.9(*)
37.6(*)
55
0.44
STU10NC70ZI
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
(•)Pulse width limited by safe operating area
Sep 2000
1/10
STU10NC70Z/STU10NC70ZI
THERMAL DATA
Max220
Rthj-case
Rthj-amb
Rthc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.78
30
0.1
300
I-Max220
2.27
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Max Value
9.4
400
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250 µA, V
GS
= 0
I
D
= 1 mA, V
GS
= 0
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ±20V
Min.
700
1
1
50
±10
Typ.
Max.
Unit
V
V/°C
µA
µA
µA
∆BV
DSS
/∆T
J
Breakdown Voltage Temp.
Coefficient
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
I
D(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5.3A
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
9.4
Min.
3
Typ.
4
0.58
Max.
5
0.75
Unit
V
Ω
A
DYNAMIC
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=5.3A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
13
3550
250
30
Max.
Unit
S
pF
pF
pF
2/10
STU10NC70Z/STU10NC70ZI
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 350V, I
D
= 5.3A
R
G
= 4.7Ω V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 560V, I
D
= 10.6 A,
V
GS
= 10V
Min.
Typ.
34
12
72
19
24
100
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF (INDUCTIVE LOAD)
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 560V, I
D
= 10.6 A,
R
G
= 4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
34
36
80
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 9.4 A, V
GS
= 0
I
SD
= 10.6 A, di/dt = 100A/µs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
660
8.7
26
Test Conditions
Min.
Typ.
Max.
9.4
37.6
1.6
Unit
A
A
V
ns
µC
A
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
αT
Rz
Parameter
Gate-Source Breakdown
Voltage
Voltage Thermal Coefficient
Dynamic Resistance
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
I
GS
= 50 mA, V
GS
= 0
Min.
25
1.3
90
Typ.
Max.
Unit
V
10
-4
/°C
Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
BV
=
αT
(25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/10
STU10NC70Z/STU10NC70ZI
Safe Operating Area For Max220
Safe Operating Area For I-Max220
Thermal Impedance For Max220
Thermal Impedance For I-Max220
Output Characteristics
Transfer Characteristics
4/10
STU10NC70Z/STU10NC70ZI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/10
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