STU10NC70Z datasheet, PDF - EEWORLD Datasheet

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STU10NC70Z: DescriptionN-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET; CategoryDiscrete semiconductor The transistor; File Size284KB，10 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STU10NC70Z Overview

N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET

STU10NC70Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
package instruction	MAX220, 3 PIN
Contacts	3
Reach Compliance Code	_compli
Avalanche Energy Efficiency Rating (Eas)	400 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	700 V
Maximum drain current (Abs) (ID)	9.4 A
Maximum drain current (ID)	9.4 A
Maximum drain-source on-resistance	0.75 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	160 W
Maximum pulsed drain current (IDM)	37.6 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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STU10NC70Z

STU10NC70ZI

N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220

Zener-Protected PowerMESH™III MOSFET

TYPE

STU10NC70Z

STU10NC70ZI

DSS

700 V

DS(on)

<0.75Ω

9.4 A

TYPICAL R

(on) = 0.58Ω

EXTREMELY HIGH dv/dt CAPABILITY

GATE-TO-SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

Max220

I-Max220

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(1)

TOT

ESD(G-S)

dv/dt(

)

ISO

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 kΩ)

Gate- source Voltage

Drain Current (continuos) at T

= 25°C

Drain Current (continuos) at T

= 100°C

Drain Current (pulsed)

Total Dissipation at T

= 25°C

Derating Factor

Gate-source Current

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

–65 to 150

150

(1)I

≤9.4A,

di/dt

≤100A/µs,

≤

(BR)DSS

, T

≤

JMAX

(*)Limited only by maximum temperature allowed

Value

STU10NC70Z

700

±25

9.4

5.9

37.6

160

1.28

±50

2000

9.4(*)

5.9(*)

37.6(*)

0.44

STU10NC70ZI

Unit

W/°C

V/ns

°C

(•)Pulse width limited by safe operating area

Sep 2000

1/10

STU10NC70Z Related Products

	STU10NC70Z	STU10NC70ZI
Description	N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
Is it Rohs certified?	incompatible	conform to
Maker	STMicroelectronics	STMicroelectronics
package instruction	MAX220, 3 PIN	IMAX220, 3 PIN
Contacts	3	3
Reach Compliance Code	_compli	not_compliant
Avalanche Energy Efficiency Rating (Eas)	400 mJ	400 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	700 V	700 V
Maximum drain current (Abs) (ID)	9.4 A	9.4 A
Maximum drain current (ID)	9.4 A	9.4 A
Maximum drain-source on-resistance	0.75 Ω	0.75 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e0	e3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	160 W	55 W
Maximum pulsed drain current (IDM)	37.6 A	37.6 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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