LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
6
5
4
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
6
5
4
Q
2
Q
1
See Table
1
1
2
3
2
3
SOT-363 /SC-88
CASE 419B STYLE1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current -Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR– 5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
R
θJA
T
J
, T
stg
Symbol
P
D
Max
380
250
3.0
328
–55 to +150
Unit
mW
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BC846BDW1T1
BC847BDW1T1
BC847CDW1T1
BC848BDW1T1
BC848CDW1T1
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
BC846b–1/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
Min
Typ
Max
Unit
V
65
45
30
V
(BR)CES
80
50
30
V
(BR)CBO
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA)
BC846 Series
BC847 Series
BC848 Series
Collector–Emitter Breakdown Voltage
(I
C
= 10
µA,
V
EB
= 0)
BC846 Series
BC847 Series
BC848 Series
Collector–Base Breakdown Voltage
(I
C
= 10
µA)
BC846 Series
BC847 Series
BC848 Series
Emitter–Base Breakdown Voltage
(I
E
= 1.0
µA)
BC846 Series
BC847 Series
BC848 Series
(V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
(BR)CEO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
—
—
—
V
—
—
—
V
—
—
—
15
5.0
80
50
30
V
(BR)EBO
6.0
6.0
5.0
—
—
Collector Cutoff Current
I
CBO
nA
µA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
µA,
V
CE
= 5.0 V)
h
FE
BC846B, BC847B, BC848B
BC847C, BC848C
BC846B, BC847B, BC848B
BC847C, BC848C
—
—
200
420
—
—
—
—
580
—
150
270
290
520
—
—
0.7
0.9
660
—
—
—
450
800
0.25
0.6
—
—
700
770
V
V
mV
—
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA) V
CE(sat)
Collector–Emitter Saturation Voltage
( I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
BE(sat)
Base–Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base–Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base–Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure (I
C
= 0.2 mA,
V
CE
= 5.0 V
dc
, R
S
= 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
BC846B, BC847B, BC848B
BC847C, BC848C
f
T
C
obo
NF
100
—
—
—
—
—
—
—
—
4.5
10
4.0
MHz
pF
dB
BC846b–2/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
1.0
0.9
1.5
0.8
1.0
0.8
0.6
0.7
2.0
h FE , NORMALIZED DC CURRENT GAIN
V,VOLTAGE (VOLTS)
0.6
0.5
0.4
0.3
0.2
0.1
0.4
0.3
0.2
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
θ
vb
, TEMPERATURE COEFFICIENT (mV/ ° C)
1.0
V
CE
, COLLECTOR-EMITTER VOLTAGE(V)
1.2
1.6
1.6
1.2
2.0
0.8
2.4
0.4
2.8
0
0.02
0.1
1.0
10
20
0.2
1.0
10
100
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
BC846b–3/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
TYPICAL CHARACTERISTICS
10
7.0
T
f
, CURREN-GAIN-BANDWIDTH PRODUCT (MHz)
400
300
200
C,CAPACITANCE(pF)
5.0
100
80
60
40
30
20
0.5 0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
3.0
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
1.0
h
FE
, DC CURRENT GAIN (NORMALIZED)
0.8
2.0
1.0
V, VOLTAGE (VOLTS)
1.0
10
100
0.6
0.4
0.5
0.2
0.2
0.1 0.2
0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR-EMITTER VOLTAGE(VOLTS)
2.0
-1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/ ° C)
1.6
-1.4
1.2
-1.8
0.8
-2.2
0.4
-2.6
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
-3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
BC846b–4/5
LESHAN RADIO COMPANY, LTD.
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
0.001
0
1.0
10
100
1.0K
10K
100K
1.0M
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.01
0.01
t, TIME (ms)
Figure 11. Thermal Response
-200
I
C
, COLLECTOR CURRENT (mA)
-100
The safe operating area curves indicate I
C
–V
CE
limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 12 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
< 150°C. T
J
(pk) may be calculated from the data in Figure 12. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
-1.0
-5.0
-10
-30
-45
-65
-100
-50
-10
-5.0
-2.0
V
CE
, COLLECTOR–EMITTER VOLTAGE (V)
Figure 12. Active Region Safe Operating Area
BC846b–5/5
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