BC807-40LT1 datasheet, PDF - EEWORLD Datasheet

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BC807-40LT1: Description800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size38KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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BC807-40LT1 Overview

800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC807-40LT1 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.5 A
Configuration	Single
Minimum DC current gain (hFE)	250
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Nominal transition frequency (fT)	100 MHz

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

3

COLLECTOR

2

BASE

BC807-16LT1

BC807-25LT1

BC807-40LT1

1

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Symbol

V

CEO

V

CBO

V

EBO

3

Value

–45

–50

–5.0

–500

Unit

V

mAdc

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

I

C

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board, (1)

T

A

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) T

A

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

P

D

225

1.8

R

θJA

P

D

556

300

R

θJA

T

J

, T

stg

2.4

417

–55 to +150

mW

mW/°C

°C/W

mW

mW/°C

°C/W

°C

Max

Unit

DEVICE MARKING

BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I

C

= –10 mA)

Collector–Emitter Breakdown Voltage

(V

EB

= 0, I C = –10µA)

Emitter–Base Breakdown Voltage

(I

E

= –1.0

µA)

Collector Cutoff Current

(V

CB

= –20 V)

(V

CB

= –20 V, T

J

= 150°C)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

V

(BR)EBO

I

CBO

—

–100

–5.0

nA

µA

–5.0

—

V

(BR)CES

–50

—

V

(BR)CEO

–45

—

V

M1–1/2

BC807-40LT1 Related Products

	BC807-40LT1	BC807-16LT1	BC807-25LT1
Description	800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Maker	LRC	LRC	LRC
Reach Compliance Code	unknow	unknow	unknow
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	250	100	160
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W
surface mount	YES	YES	YES
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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