BC807W, BC808W
PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC817W, BC818W (NPN)
3
2
1
VSO05561
Type
BC807-16W
BC807-25W
BC807-40W
BC808-16W
BC808-25W
BC808-40W
Maximum Ratings
Parameter
Marking
5As
5Bs
5Cs
5Es
5Fs
5Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
Symbol
V
CEO
V
CBO
V
EBO
BC 807W
45
50
5
500
1
100
200
250
150
BC 808W
25
30
5
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation
,
T
S
= 130 °C
Junction temperature
Storage temperature
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
mA
A
mA
mW
°C
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
80
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC807W, BC808W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 25 V,
I
E
= 0
Collector cutoff current
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain 1)
I
C
= 100 mA,
V
CE
= 1 V
h
FE
-grp.
16
h
FE
-grp.
25
h
FE
-grp.
40
DC current gain 1)
I
C
= 500 mA,
V
CE
= 1 V
Collector-emitter saturation voltage1)
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage 1)
I
C
= 500 mA,
I
B
= 50 mA
V
BEsat
V
CEsat
h
FE
h
FE
I
EBO
I
CBO
I
CBO
V
(BR)CEO
typ.
max.
Unit
V
45
25
-
-
-
-
-
-
-
-
-
-
-
-
-
100
50
100
nA
µA
nA
-
100
160
250
40
-
-
160
250
350
-
-
-
250
400
630
-
0.7
1.2
V
BC807W
BC808W
V
(BR)CBO
BC807W
BC808W
V
(BR)EBO
50
30
5
-
-
-
1) Pulse test: t
≤
300µs, D = 2%
2
Nov-29-2001
BC807W, BC808W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
60
-
C
cb
-
10
-
f
T
-
200
-
typ.
max.
Unit
MHz
pF
3
Nov-29-2001
BC807W, BC808W
Total power dissipation
P
tot
=
f
(T
S
)
Permissible Pulse Load
R
thJS
=
f
(t
p
)
300
10
3
K/W
mW
10
2
P
tot
200
R
thJS
10
1
150
100
10
0
50
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0
0
20
40
60
80
100
120
°C
150
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
Collector cutoff current
I
CBO
=
f(T
A
)
V
CB
= 25V
10
5
EHP00213
P
totmax
/
P
totDC
=
f
(t
p
)
10
3
P
totmax
/ P
totDC
-
Ι
CBO
nA
10
4
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
3
max
10
2
typ
10
1
10
1
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0
0
50
100
˚C
T
A
150
t
p
4
Nov-29-2001
BC807W, BC808W
DC current gain
h
FE
=
f(I
C
)
V
CE
= 1V
3
EHP00216
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5V
10
3
f
T
MHz
5
EHP00210
10
h
FE
5
100 ˚C
25 ˚C
-50 ˚C
10
2
5
10
2
10
1
5
5
10
0
10
-1
10
0
10
1
10
2
mA 10
3
10
1
10
0
10
1
10
2
mA
10
3
Ι
C
Ι
C
Base-emitter saturation voltage
I
C
=
f(V
BEsat
),
h
FE
= 10
10
3
EHP00214
Collector-emitter saturation voltage
I
C
=
f
(V
CEsat
),
h
FE
= 10
10
3
EHP00215
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
Ι
C
mA
150 ˚C
25 ˚C
-50 ˚C
10
2
5
10
2
5
10
1
5
10
1
5
10
0
5
10
0
5
10
-1
0
1.0
2.0
3.0
V
4.0
10
-1
0
0.2
0.4
0.6
V
0.8
V
BEsat
V
CEsat
5
Nov-29-2001
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