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FDB102S

Description
Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers
CategoryDiscrete semiconductor    diode   
File Size187KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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FDB102S Overview

Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers

FDB102S Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeBRIDGE RECTIFIER DIODE
FDB101S ~ FDB107S
Elektronische Bauelemente
Voltage 50V ~ 1000V
1.0 Amp Silicon Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, soldered plated
Plastic material has UL flammability classification 94V-0
DB-1SA
MECHANICAL DATA
Polarity: As marked on Body
Weight:0.016 ounces, 0.45 grams
Mounting position: Any
PACKAGE INFORMATION
Package
DB-1SA
MPQ
1.5K
Leader Size
13 inch
REF.
A
B
D
E
F
G
Millimeter
Min.
Max.
8.20
8.40
8.00
8.60
6.10
6.50
2.35
2.65
4.80
5.20
9.40
10.6
REF.
H
J
Millimeter
Min.
Max.
0.90
1.50
0.90
1.10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
C
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current
@T
A
=25°
C
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Superimposed on Rated
Load (JEDEC Method)
Maximum Forward Voltage @ 1.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T
A
=25°
C
T
A
=100°
C
1
Symbol
V
RRM
V
RMS
V
DC
I
F (AV)
I
FSM
V
F
I
R
T
RR
T
J
, T
STG
FDB
101S
FDB
102S
FDB
103S
FDB
104S
FDB
105S
FDB
106S
FDB
107S
Unit
V
V
V
A
A
V
µA
mA
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.1
10
1
600
420
600
800
560
800
1000
700
1000
Maximum Reverse Recovery Time
150
250
-55~125, -55~150
500
ns
°
C
Operating and Storage temperature range
Notes:
1. Measured with I
F
=0.5A, I
R
=1A, I
RR
=0.25A
06-Mar-2012 Rev. A
Page 1 of 2

FDB102S Related Products

FDB102S FDB101S FDB103S FDB104S FDB105S FDB106S FDB107S
Description Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers
Maker SECOS SECOS SECOS SECOS SECOS SECOS SECOS
Reach Compliance Code compli compliant compli compli compli compliant compliant
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
ECCN code EAR99 - EAR99 EAR99 - EAR99 EAR99
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