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FDD7N20LZ

Description
POWER, FET
Categorysemiconductor    Discrete semiconductor   
File Size316KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FDD7N20LZ Overview

POWER, FET

FDD7N20LZ Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
FDD7N25LZ N-Channel UniFET
TM
MOSFET
March 2013
FDD7N25LZ
N-Channel UniFET
TM
MOSFET
250 V, 6.2 A, 550 m
Features
• R
DS(on)
= 430 m (Typ.) @ V
GS
= 10 V, I
D
= 3.1 A
• Low Gate Charge (Typ.12 nC)
• Low C
rss
(Typ. 8 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Description
UniFET
TM
MOSFET is Fairchild Semiconductor
®
’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
• LCD/LED/PDP TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
- Derate above 25 C
o
o
Parameter
FDD7N20LZ
250
±20
o
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
- Continuous (T
C
= 25 C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
6.2
3.7
25
115
5.5
5.6
10
56
0.45
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
o
C
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1
FDD7N20LZ
2.2
110
Unit
o
C/W
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
www.fairchildsemi.com

FDD7N20LZ Related Products

FDD7N20LZ FDD7N25LZTM
Description POWER, FET POWER, FET
state ACTIVE ACTIVE
Transistor type universal power supply universal power supply

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