FDD7N25LZ N-Channel UniFET
TM
MOSFET
March 2013
FDD7N25LZ
N-Channel UniFET
TM
MOSFET
250 V, 6.2 A, 550 m
Features
• R
DS(on)
= 430 m (Typ.) @ V
GS
= 10 V, I
D
= 3.1 A
• Low Gate Charge (Typ.12 nC)
• Low C
rss
(Typ. 8 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Description
UniFET
TM
MOSFET is Fairchild Semiconductor
®
’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
• LCD/LED/PDP TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
- Derate above 25 C
o
o
Parameter
FDD7N20LZ
250
±20
o
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
- Continuous (T
C
= 25 C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
6.2
3.7
25
115
5.5
5.6
10
56
0.45
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
o
C
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1
FDD7N20LZ
2.2
110
Unit
o
C/W
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFET
TM
MOSFET
Package Marking and Ordering Information
Device Marking
FDD7N25LZ
Device
FDD7N25LZ
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current, Forward
Gate to Body Leakage Current, Reverse
I
D
= 250A, V
GS
= 0V, T
C
= 25
o
C
I
D
= 250A, Referenced to 25
o
C
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, T
C
=
125
o
C
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
250
-
-
-
-
-
-
0.25
-
-
-
-
-
-
1
10
10
-10
V
V/
o
C
A
A
A
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250A
V
GS
= 10V, I
D
= 3.1A
V
GS
= 5V, I
D
= 3.1A
V
DS
= 20V, I
D
= 3.1A
1.0
-
-
-
-
0.43
0.45
7
2.0
0.55
0.57
-
V
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 250V I
D
= 6.2A
V
GS
= 10V
(Note 4)
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
-
480
65
8
12
1.5
4
635
85
12
16
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 250V, I
D
= 6.2A
V
GS
= 10V, R
G
= 25
(Note 4)
-
-
-
-
10
15
75
30
30
40
160
70
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 6.2A
V
GS
= 0V, I
SD
= 6.2A
dI
F
/dt = 100A/s
-
-
-
-
-
-
-
-
130
0.6
5.5
20
1.4
-
-
A
A
V
ns
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, I
AS
= 6.2A, V
DD
= 50V, R
G
= 25, Starting T
J
= 25C
3. I
SD
6.2A,
di/dt
200A/s, V
DD
BV
DSS
, Starting T
J
= 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
2
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFET
TM
MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
10
V
GS
= 10.0V
7.0V
5.0V
3.5V
3.0V
2.5V
Figure 2. Transfer Characteristics
30
10
I
D
, Drain Current[A]
o
o
I
D
, Drain Current[A]
150 C
25 C
1
1
-55 C
o
0.1
*Notes:
1. 250
s Pulse Test
2. T
C
= 25 C
o
* Notes :
1. V
DS
= 20V
2. 250
s Pulse Test
0.03
0.03
0.1
10
0.1
1
V
DS
, Drain-Source Voltage[V]
1
2
3
4
V
GS
, Gate-Source Voltage[V]
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.5
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
R
DS
(
on
)
[
]
,
Drain-Source On-Resistance
1.2
I
S
, Reverse Drain Current [A]
10
150 C
o
o
0.9
V
GS
= 10V
V
GS
= 20V
25 C
1
Notes:
1. V
GS
= 0V
2. 250
s Pulse Test
0.6
* Note : T
J
= 25 C
o
0.3
0
3
6
9
12
I
D
, Drain Current [A]
15
18
0.1
0.0
0.4
0.8
1.2
V
SD
, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
1000
C
iss
Figure 6. Gate Charge Characteristics
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 50V
V
DS
= 125V
V
DS
= 200V
8
Capacitances [pF]
C
oss
100
6
* Note:
1. V
GS
= 0V
2. f = 1MHz
4
C
rss
10
5
0.1
Ciss = Cgs + Cgd
(
Cds = shorted
)
Coss = Cds + Cgd
Crss = Cgd
2
* Note : I
D
= 6.2A
0
1
10
V
DS
, Drain-Source Voltage [V]
30
0
3
6
9
Q
g
, Total Gate Charge [nC]
12
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
3
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFET
TM
MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
2.5
2.0
1.5
1.0
0.5
0
-80
* Notes :
1. V
GS
= 10V
2. I
D
= 3.1A
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
1.1
1.0
0.9
* Notes :
1. V
GS
= 0V
2. I
D
= 250uA
0.8
-80
-40
0
40
80
120
o
T
J
, Junction Temperature
[
C
]
160
-40
0
40
80
120
o
T
J
, Junction Temperature
[
C
]
160
Figure 9. Maximum Safe Operating Area
- FDD7N25LZ
40
30
s
Figure 10. Maximum Drain Current
vs. Case Temperature
6
10
I
D
, Drain Current [A]
100
s
1ms
5
I
D
, Drain Current [A]
4
3
2
1
0
25
1
Operation in This Area
is Limited by R
DS(on)
10ms
DC
0.1
* Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
0.01
0.1
1
10
100
V
DS
, Drain-Source Voltage [V]
400
50
75
100
125
o
T
C
, Case Temperature
[
C
]
150
Figure 11. Transient Thermal Response Curve
- FDD7N25LZ
5
Thermal Response
[
Z
JC
]
1
0.5
0.2
0.1
0.05
P
DM
t
1
t
2
0.1
0.02
0.01
Single pulse
* Notes :
1. Z
JC
(t) = 2.2 C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
o
0.01
-5
10
10
-4
10
10
Rectangular Pulse Duration [sec]
-3
-2
10
-1
1
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
4
www.fairchildsemi.com
FDD7N25LZ N-Channel UniFET
TM
MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. C0
5
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
