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FMM5061VF

Description
9500 MHz - 13300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size175KB,15 Pages
ManufacturerETC1
Download Datasheet Parametric View All

FMM5061VF Overview

9500 MHz - 13300 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

FMM5061VF Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power26 dBm
Maximum operating frequency13300 MHz
Minimum operating frequency9500 MHz
Processing package descriptionHERMETIC SEALED, cermet, CASE VF, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
structureCOMPONENT
terminal coatingNOT SPECIFIED
Impedance characteristics50 ohm
Microwave RF TypeWIDE band MEDIUM POWER
FMM5061VF
FEATURES
・High
Output Power: Pout=33.0dBm (typ.)
・High
Linear Gain: G
L
=27.0dB (typ.)
・Broad
Band: 9.5~13.3GHz
・Impedance
Matched Zin/Zout=50Ω
・Small
Hermetic Metal-Ceramic Package(VF)
DESCRIPTION
The FMM5061VF is a MMIC amplifier that contains a three-stage
amplifier, internally matched, for standard communications band in the
9.5 to 13.3GHz frequency range.
Eudyna Devices’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Channel Temperature
Storage Temperature
Symbol
V
DD
V
GG
P
in
T
ch
T
stg
Condition
Rating
10
-7
26
+175
-55~125
Recommend
6
-5
12
-40~+85
o
X-Band Power Amplifier MMIC
Unit
V
V
dBm
o
C
o
C
Unit
V
V
dBm
o
C
Unit
GHz
dBm
dB
%
dBc
mA
mA
mA
dB
dB
RECOMMENDED OPERATING CONDITION
Item
Symbol
Drain-Source Voltage
V
DD
Gate-Source Voltage
V
GG
Input Power
P
in
Operating Case Temperature
T
C
Condition
ELECTRICAL CHARACTERISTICS (Case Temperature T
C
=25 C)
Item
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency at 1dB G.C.P.
Third Order Intermodulation*
Drain Current at 1dB G.C.P.
Gate Current
Input Return Loss (at Pin=-20dBm)
Output Return Loss (at Pin=-20dBm)
Symbol
f
P
1dB
G
1dB
η
add
IM
3
I
DD
I
GG
RL
in
RL
out
Test Conditions
V
DD
=6V
V
GG
=-5V
Z
s
=Z
l
=50ohm
*1:f=9.5~11.7GHz
*2:f=11.7~13.3GHz
Limits
Min. Typ. Max.
9.5
-
13.3
*1
*1
31
33
-
*2
*2
29
31
-
24
*2
22
-
*1
26
*2
24
21
*1
*1
-
-
-
-
15
*2
-
*3
*3
*3:
f=10MHz ,
-42
-45
-
*1
*1
2-Tone Test,
-
1700 2400
*2
*2
-
1500 2400
P
out
=19dBm S.C.L.
-
25
-
-
-8
-
-
-8
-
CASE STYLE: VF
ESD
Class
0
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
~ 199 V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
July 2004
1

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