STP5NC70ZFP datasheet, PDF - EEWORLD Datasheet

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STP5NC70ZFP: DescriptionN-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET; CategoryDiscrete semiconductor The transistor; File Size237KB，12 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STP5NC70ZFP Overview

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

STP5NC70ZFP Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	TO-220AB
package instruction	TO-220FP, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	700 V
Maximum drain current (Abs) (ID)	4.6 A
Maximum drain current (ID)	4.6 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	35 W
Maximum pulsed drain current (IDM)	18.4 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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STP5NC70Z - STP5NC70ZFP

STB5NC70Z - STB5NC70Z-1

N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

STP5NC70Z/FP

STB5NC70Z/-1

DSS

700V

DS(on)

Ω

4.6 A

TYPICAL R

(on) = 1.8

Ω

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

D²PAK

TO-220

TO-220FP

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

I²PAK

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(1)

TOT

ESD(G-S)

dv/dt

ISO

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 kΩ)

Gate- source Voltage

Drain Current (continuous) at T

= 25°C

Drain Current (continuous) at T

= 100°C

Drain Current (pulsed)

Total Dissipation at T

= 25°C

Derating Factor

Gate-source Current

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

–65 to 150

150

4.6

2.9

18.4

100

0.8

± 50

2000

Value

STP(B)5NC70Z(-1)

700

± 25

4.6(*)

2.9(*)

18.4

0.32

STP5NC70ZFP

W/°C

V/ns

°C

Unit

(1)Pulse width limited by safe operating area

December 2002

(

≤4.5A,

di/dt

≤100A/µs,

≤

(BR)DSS

, T

≤

JMAX

(*)

Limited only by maximum temperature allowed

1/12

STP5NC70ZFP Related Products

	STP5NC70ZFP	STP5NC70Z	STB5NC70Z	STB5NC70Z-1
Description	N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET	N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Parts packaging code	TO-220AB	TO-220AB	D2PAK	TO-262AA
package instruction	TO-220FP, 3 PIN	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3
Reach Compliance Code	_compli	_compli	_compli	compli
Is it Rohs certified?	incompatible	incompatible	conform to	-
Avalanche Energy Efficiency Rating (Eas)	200 mJ	-	200 mJ	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	700 V	-	700 V	700 V
Maximum drain current (Abs) (ID)	4.6 A	-	4.6 A	4.6 A
Maximum drain current (ID)	4.6 A	-	4.6 A	4.6 A
Maximum drain-source on-resistance	2 Ω	-	2 Ω	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	-	TO-263AB	TO-262AA
JESD-30 code	R-PSFM-T3	-	R-PSSO-G2	R-PSIP-T3
Number of components	1	-	1	1
Number of terminals	3	-	2	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	35 W	-	100 W	100 W
Maximum pulsed drain current (IDM)	18.4 A	-	18.4 A	18.4 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	NO	-	YES	NO
Terminal form	THROUGH-HOLE	-	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON

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