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STB5NC70Z-1

Description
N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size237KB,12 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STB5NC70Z-1 Overview

N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET

STB5NC70Z-1 Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage700 V
Maximum drain current (Abs) (ID)4.6 A
Maximum drain current (ID)4.6 A
Maximum drain-source on-resistance2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)18.4 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
STP5NC70Z - STP5NC70ZFP
STB5NC70Z - STB5NC70Z-1
N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
STP5NC70Z/FP
STB5NC70Z/-1
s
s
V
DSS
700V
700V
R
DS(on)
<2
<2
I
D
4.6 A
4.6 A
1
3
s
s
s
TYPICAL R
DS
(on) = 1.8
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D²PAK
1
2
3
TO-220
TO-220FP
12
3
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
s
I²PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
I
GS
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
–65 to 150
150
4.6
2.9
18.4
100
0.8
± 50
3
3
2000
Value
STP(B)5NC70Z(-1)
700
700
± 25
4.6(*)
2.9(*)
18.4
35
0.32
STP5NC70ZFP
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
Unit
(1)Pulse width limited by safe operating area
December 2002
(
q
)I
SD
≤4.5A,
di/dt
≤100A/µs,
V
DD
V
(BR)DSS
, T
j
T
JMAX
(*)
.
Limited only by maximum temperature allowed
1/12

STB5NC70Z-1 Related Products

STB5NC70Z-1 STP5NC70ZFP STP5NC70Z STB5NC70Z
Description N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
Maker STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Parts packaging code TO-262AA TO-220AB TO-220AB D2PAK
package instruction IN-LINE, R-PSIP-T3 TO-220FP, 3 PIN FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3 3 3
Reach Compliance Code compli _compli _compli _compli
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ - 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 700 V 700 V - 700 V
Maximum drain current (Abs) (ID) 4.6 A 4.6 A - 4.6 A
Maximum drain current (ID) 4.6 A 4.6 A - 4.6 A
Maximum drain-source on-resistance 2 Ω 2 Ω - 2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA TO-220AB - TO-263AB
JESD-30 code R-PSIP-T3 R-PSFM-T3 - R-PSSO-G2
Number of components 1 1 - 1
Number of terminals 3 3 - 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form IN-LINE FLANGE MOUNT - SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL
Maximum power dissipation(Abs) 100 W 35 W - 100 W
Maximum pulsed drain current (IDM) 18.4 A 18.4 A - 18.4 A
Certification status Not Qualified Not Qualified - Not Qualified
surface mount NO NO - YES
Terminal form THROUGH-HOLE THROUGH-HOLE - GULL WING
Terminal location SINGLE SINGLE - SINGLE
transistor applications SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON
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