®
STM376-2
RF POWER MODULE
WIRELESS LOCAL LOOP APPLICATIONS
.
.
.
.
.
.
PRELIMINARY DATA
LINEAR POWER AMPLIFIER
350-376 MHz
20 VOLTS
INPUT/OUTPUT 50 OHMS
P
OU T
=
1.0 W
AV G
(2.0 W PEP)
GAIN
=
21 dB
CASE STYLE H170
DESCRIPTION
The STM376-2 module is designed to be used
as a linear RF Power Amplifier for WLL or other
fixed radio a ccess subscriber applications.
This particular model is one of several in de-
sign covering the 300-5 00 MHz freque ncy
range in individual bandwidths of 25 MHz each.
Band splits and corresponding part numbers
for all bands are as follows:
STM326-2
STM351-2
STM376-2
STM401-2
STM426-2
STM451-2
STM476-2
STM500-2
300-326 MHz
325-351 MHz
350-376 MHz
375-401
400-426
425-451
450-476
475-500
MHz
MHz
MHz
MHz
MHz
PROTOTYPES
AVAILABLE
ORDER CODE
STM376-2
BRANDING
STM376-2
PIN CONNECTION
1.
2.
3.
4.
RF Input
N/C
GND
N/C
5.
6.
7.
8.
I
BB
GND
V
CC
(+20VDC)
RF output
ABSOLUTE MAXIMUM RATINGS (T
case
=25°
C)
Symbol
Parameter
Valu e
Unit
V
CC
I
CC (q)
I
CC
P
IN
P
OU T
T
ST G
T
C
DC Supply Voltage
Quiescent Current (pin 7)
Operating Current (pin 7)
RF Input Power
RF Output Power
Storage Temperature
Operating Case Temperature
+21
200
500
30
2.0
-30 to +100
−
20 to +60
Vdc
mAdc
mAdc
mW
W
AVG
°
C
°
C
June 15, 1998
1/3
STM376-2
ELECTRICAL SPECIFICATIONS (T
case
=
30
°
C, V
CC
=
20.0Vdc, V
BB
=
8.8 Vdc)
Symb ol
Parameter
Test Con dition s
Value
Min.
Typ.
Max.
Unit
BW
G
P
η
I
CC( q)
I
CC
I
BB
H
IMD
—
—
Frequency Range
Power Gain
Efficiency
Input VSWR
Quiescent
Current
Collector Supply
Current
Bias Current
Harmonics
Intermodulation
Distortion
Load Mismatch
Stability
P
OUT
=
1.0 W*
P
OUT
=
1.0 W*
P
OUT
=
1.0 W*
P
IN
=
0 W
P
OUT
=
1.0 W*
P
OUT
=
1.0 W*
P
OUT
=
1.0 W*
P
OUT
=
1.0 W*
Load VSWR
=
∞
:1
P
OUT
=
1.0 W*
Load VSWR
=
5:1
P
OUT
=
1.0 W*
(All phase angles)
(All phase angles)
F = 350 MHz
Z
S
, Z
L
=
50Ω
350
21
11
—
110
—
—
—
—
23
12.5
—
120
375
65
-34
-46
376
25
—
1.5:1
130
425
—
-30
-40
MHz
dB
%
VSWR
mA
mA
mA
dBc
dBc
No Degradation in Output
Power after Load Restoration
All Spurious outputs more
than 50dB below carrier
* 2 T one Test, 50 KHz spacing: P
OUT
= 1.0 W
AVG
(2. 0 W
PEP
)
MODULE DC AND TEST FIXTURE CONFIGURATION
+8.8VDC
+20 VDC
1000 pF
0.1 uF
3.3 uF
* Bead
300 pF
RF
IN
50 Ω
Line
300 pF
120
Ω
1 W
N/C
N/C
50 Ω
Line
10 uF
RF
OUT
1000 pF
12 34 567 8
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®
STM376-2
PACKAGE MECHANICAL DATA
Ref.: UDCS No. 1021374 rev. A
Informati on furni shed i s believed to be accurate and reliable. H owever , STMicroelectroni cs assumes no responsibi lity for the conse -
quences of use of such i nformation nor for any infri ngement of patents or other rights of thir d parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent r ights of STMicroelectronics. Specifications mentioned in this
publication are subject to change without notice. T his publication supersedes and replac es all information previously supplied.
STMicr oelectronics products are not authori zed for use as critical components i n li fe suppo rt devi ces or systems without express written
approval of STMicroelectronics.
The ST l ogo is a registered trademark of STMicroelectronics
©1998
STM icroelectronics - Al l R ights Reserved
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