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DS2012N-65

Description
FIFO, 4KX9, 65ns, Asynchronous, CMOS, PDIP28,
Categorystorage    storage   
File Size62KB,1 Pages
ManufacturerDALLAS
Websitehttp://www.dalsemi.com
Download Datasheet Parametric Compare View All

DS2012N-65 Overview

FIFO, 4KX9, 65ns, Asynchronous, CMOS, PDIP28,

DS2012N-65 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDALLAS
Reach Compliance Codeunknow
Maximum access time65 ns
Maximum clock frequency (fCLK)12.5 MHz
JESD-30 codeR-PDIP-T28
JESD-609 codee0
memory density36864 bi
Memory IC TypeOTHER FIFO
memory width9
Number of functions1
Number of terminals28
word count4096 words
character code4000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4KX9
ExportableNO
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum standby current0.002 A
Maximum slew rate0.12 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

DS2012N-65 Related Products

DS2012N-65 DS2012-50 DS2012-120 DS2012-65 DS2012N-50 DS2012N-80
Description FIFO, 4KX9, 65ns, Asynchronous, CMOS, PDIP28, FIFO, 4KX9, 50ns, Asynchronous, CMOS, PDIP28, FIFO, 4KX9, 120ns, Asynchronous, CMOS, PDIP28, FIFO, 4KX9, 65ns, Asynchronous, CMOS, PDIP28, FIFO, 4KX9, 50ns, Asynchronous, CMOS, PDIP28, FIFO, 4KX9, 80ns, Asynchronous, CMOS, PDIP28,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker DALLAS DALLAS DALLAS DALLAS DALLAS DALLAS
Reach Compliance Code unknow unknown unknown unknown unknown unknown
Maximum access time 65 ns 50 ns 120 ns 65 ns 50 ns 80 ns
Maximum clock frequency (fCLK) 12.5 MHz 15.38 MHz 7.14 MHz 12.5 MHz 15.38 MHz 10 MHz
JESD-30 code R-PDIP-T28 R-PDIP-T28 R-PDIP-T28 R-PDIP-T28 R-PDIP-T28 R-PDIP-T28
JESD-609 code e0 e0 e0 e0 e0 e0
memory density 36864 bi 36864 bit 36864 bit 36864 bit 36864 bit 36864 bit
Memory IC Type OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO
memory width 9 9 9 9 9 9
Number of functions 1 1 1 1 1 1
Number of terminals 28 28 28 28 28 28
word count 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words
character code 4000 4000 4000 4000 4000 4000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 70 °C 70 °C 85 °C 85 °C
organize 4KX9 4KX9 4KX9 4KX9 4KX9 4KX9
Exportable NO NO NO NO NO NO
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
Maximum slew rate 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA 0.12 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Other features - RETRANSMIT RETRANSMIT RETRANSMIT RETRANSMIT -
Output characteristics - 3-STATE 3-STATE 3-STATE 3-STATE -
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