RAD7214-NCP datasheet, PDF - EEWORLD Datasheet

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RAD7214-NCP: DescriptionPower Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size45KB，4 Pages; ManufacturerCobham PLC

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RAD7214-NCP Overview

Power Field-Effect Transistor

RAD7214-NCP Parametric

Parameter Name	Attribute value
Maker	Cobham PLC
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99

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Standard Products

RAD7214-NCx Power MOSFET Die

Data Sheet

January, 2012

www.aeroflex.com/MOSFETS

FEATURES



250Vbreakdown voltage



2.5 A current rating



1.2R

DS(on)



15nC gate charge



-55

C to +125

C temperature range



Operational Environment radiation testing to MIL-STD-

750

- Total-dose: 100 krads(Si)

- SEGR/SEB immune to Xe at full rated drain potential



Bare Die

- Prototype, EMs and Class S



Drop-in compatible with industry standards



Class S MOSFETs built to your custom flow

INTRODUCTION

Aeroflex RAD's new radiation tolerant power MOSFETs are

now available in die, seven standard package options and custom

packaging for HiRel environments. Applications within

military, aerospace, medical, nuclear power generation, high

energy physics research laboratories can benefit from the use of

this new series of MOSFETs. Aeroflex's Power MOSFETs are

radiation tolerant to 100 krad(Si) and SEGR/SEB immune to

their full rated breakdown potential.

Operational power losses are minimized by Aeroflex’s ideal

combination of low R

DS(on)

and gate charge. Die size is

optimized for maximum current rating while meeting industry

norms. These units are suitable for standalone and hybrid

applications.

The RAD7214-NCx Die are well suited for low loss switching

applications, such as DC-to-DC Converters and solid-state

relays. They are drop-in compatible with industry standards.

ELECTRICAL CHARACTERISTICS

(Case temperature (T

) = 25

C unless otherwise specified)

CHARACTERISTICS

TEST CONDITIONS

MIN

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero-Gate Leakage

Drain Current

Drain-Source On Resistance

Gate Charge at 12V

Diode Forward Voltage

Junction-to-Case

BVdss

Vgs(th)

Igss

Idss1

Idss2

ds(on)

Qg(12)

Vsd

Rjc

Vgs - 0V, Id = 1mA

Vds = Vgs, Id = 1.0mA

Vgs = +20V

Vds = 200V, Vgs = 0V

Vds = 200V, Vgs = 0V, Tc

125

Vgs = 12V, Id = 2.0A

Vgs = 0V to 12V

Id = 2.5A, Vgs = 0V

NA/Die

Id = 2.5A

Vdd = 125V

250

2.0

0.6

LIMITS

TYP

MAX

4.0

100

250

1.2

1.8

UNITS

A

ohms

C/W

RAD7214-NCP Related Products

	RAD7214-NCP	RAD7214-NCE	RAD7214-NCS
Description	Power Field-Effect Transistor	Power Field-Effect Transistor	Power Field-Effect Transistor
Maker	Cobham PLC	Cobham PLC	Cobham PLC
Reach Compliance Code	unknow	unknown	unknown

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