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BU2522AF

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size451KB,7 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric View All

BU2522AF Overview

Transistor,

BU2522AF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)8
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)45 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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