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IS61NW6432-6TQ

Description
ZBT SRAM, 64KX32, 6ns, CMOS, PQFP100,
Categorystorage    storage   
File Size873KB,14 Pages
ManufacturerIntegrated Circuit Solution Inc.
Download Datasheet Parametric Compare View All

IS61NW6432-6TQ Overview

ZBT SRAM, 64KX32, 6ns, CMOS, PQFP100,

IS61NW6432-6TQ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntegrated Circuit Solution Inc.
package instructionQFP, QFP100,.63X.87
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time6 ns
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
memory density2097152 bi
Memory IC TypeZBT SRAM
memory width32
Number of terminals100
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64KX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.06 A
Minimum standby current3.14 V
Maximum slew rate0.22 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
IS61NW6432
IS61NW6432
64K x 32 SYNCHRONOUS STATIC RAM
WITH NO-WAIT STATE BUS FEATURE
FEATURES
• Fast access time:
— 5 ns-100 MHz; 6 ns-83 MHz;
— 7 ns-75 MHz; 8ns-66 MHz;
• No wait cycles between Read and write
• Internal self-timed write cycle
• Individual byte write Control
• Clock controlled, registered address, data and
control
• Pentium
TM
or Inear burst sequence control using
MODE input
• Three chip enables for simple depth depth
expansion and adress pipelining
• Common data inputs and data outputs
• JEDEC 100-pin LQFP and PQFP package
• Single+3.3V power supply
• Optional data strobe pin (#80) for latching data
(See page 12 for detailed timing)
DESCRIPTION
The IS61NW6432 is a high-speed, low-power synchronous
static RAM designed to provide a burstable, high-performance,
no-wait bus, secondary cache for the Pentium, 680X0, and
Power PC microprocessors. It is organized as 65,536 words
by 32 bits, fabricated with ICSI's advanced CMOS technology.
Incorporating a no-wait bus, wait cycles are eliminated when
the bus switches from read to write, or write to read. This
device integrates a 2-bit burst counter, high-speed SRAM
core, and high-drive capability outputs into a single monolithic
circuit.
All synchronous inputs pass through registers controlled by a
Positive-edge-trggered clock input. Operations may be sus-
pended and all synchronous inputs ignored when Clock Enable,
CEN
is HIGH. In this state the internal device will hold their
previous values.
When the ADV/LD is HIGH the internal burst counter is
incremented. New external addresses can be loaded when
ADV/LD is LOW.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock inputs and when RD/WE is LOW.
Separate byte enables allow indiviual bytes to be written.
BW1
controls I/O1-I/P8;
BW2
controls I/O9-I/O16;BW3 controls I/
O17-I/O24;
BW4
controls I/O25-I/O32. All Bytes are written
when
BW1, BW2, BW3,
and
BW4
are LOW.
MODE pin upon power up is in interleave burst mode. It can be
connected to GND or Vcc
Q
to alter power up state.
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SSR006-0B
1

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Description ZBT SRAM, 64KX32, 6ns, CMOS, PQFP100, ZBT SRAM, 64KX32, 7ns, CMOS, PQFP100, ZBT SRAM, 64KX32, 7ns, CMOS, PQFP100, ZBT SRAM, 64KX32, 8ns, CMOS, PQFP100, ZBT SRAM, 64KX32, 6ns, CMOS, PQFP100, ZBT SRAM, 64KX32, 8ns, CMOS, PQFP100,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. Integrated Circuit Solution Inc.
package instruction QFP, QFP100,.63X.87 QFP, QFP100,.7X.9 QFP, QFP100,.63X.87 QFP, QFP100,.7X.9 QFP, QFP100,.7X.9 QFP, QFP100,.63X.87
Reach Compliance Code unknow unknown unknown unknown unknown unknow
Maximum access time 6 ns 7 ns 7 ns 8 ns 6 ns 8 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e0 e0 e0 e0 e0 e0
memory density 2097152 bi 2097152 bit 2097152 bit 2097152 bit 2097152 bit 2097152 bi
Memory IC Type ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
memory width 32 32 32 32 32 32
Number of terminals 100 100 100 100 100 100
word count 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000 64000 64000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 64KX32 64KX32 64KX32 64KX32 64KX32 64KX32
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QFP QFP QFP QFP QFP QFP
Encapsulate equivalent code QFP100,.63X.87 QFP100,.7X.9 QFP100,.63X.87 QFP100,.7X.9 QFP100,.7X.9 QFP100,.63X.87
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A
Minimum standby current 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
Maximum slew rate 0.22 mA 0.21 mA 0.21 mA 0.2 mA 0.22 mA 0.2 mA
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm
Terminal location QUAD QUAD QUAD QUAD QUAD QUAD
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