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GL41M

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB
CategoryDiscrete semiconductor    Ordinary rectifier diode   
File Size287KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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GL41M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB

GL41M Parametric

Parameter NameAttribute value
Case StyleDO-213AB
IF(A)1.0
Maximum recurrent peak reverse voltage1000
Peak forward surge curre30
Maximum instantaneous forward voltage1.2
@IVA(A)1.0
Maximum reverse curre5.0
TRR(nS)/
classDiodes
GL41A-GL41Y
Surface Mount Rectifiers
VOLTAGE RANGE
: 50 --- 1600 V
CURRENT: 1.0 A
Features
Plastic package has underwriters laboratories
flammability classification 94V-0
Glass passivated chip junction
High temperature metallurgically bonded construction
Cavity-free glass passivated junction
High temperature soldering guaranteed:450
℃/5
seconds at terminals.Complete device sub-mersible
temperature of 265℃ for 10 seconds in solder bath
D1
2.6± 0.15
DO - 213AB
SOLDERABLE ENDS
D2=D1
0
0.20
For surface mount applications
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
Mechanical Data
Case: JEDEC DO-213AB,molded plastic
Polarity: Color band denotes cathode
Weight: 0.0046 ounces, 0.116 grams
Mounting position: Any
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
GL GL GL GL GL GL GL GL GL
UNITS
41A 41B 41D 41G 41J 41K 41M 41T 41Y
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see FIG.1)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage
@1.0A
Maximum reverse current
@T
A
=25℃
at rated DC blocking voltage @T
A
=125℃
Typical junction capacitance (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
j
R
θJA
T
j
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
1.0
800 1000 1300 1600
560 700 910 1120
800 1000 1300 1600
V
V
V
A
30
A
1.1
10
50
8.0
75
- 55 ---- +175
- 55 ---- +175
1.2
V
µA
pF
℃/W
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient, 0.24×0.24"(6.0×6.0mm) copper pads to each terminal.
http://www.luguang.cn
mail:lge@luguang.cn

GL41M Related Products

GL41M GL41A GL41B GL41D GL41G GL41J GL41K GL41T GL41Y
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, SILICON, SIGNAL DIODE, DO-213AB 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, SILICON, SIGNAL DIODE, DO-213AB 1 A, 1600 V, SILICON, SIGNAL DIODE, DO-213AB
Parts packaging code - DO-213AB DO-213AB - DO-213AB - - DO-213AB DO-213AB
Manufacturer packaging code - DO-213AB DO-213AB - DO-213AB - - DO-213AB DO-213AB
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