EB13C3H1H-10.000M
Series
RoHS Compliant (Pb-free) Low Current 3.3V 4 Pad
5mm x 7mm Ceramic SMD LVCMOS Oscillator
Frequency Tolerance/Stability
±50ppm over -40°C to +85°C
Duty Cycle
50 ±10(%)
RoHS
Pb
EB13C3 H 1 H -10.000M
Nominal Frequency
10.000MHz
Logic Control / Additional Output
Tri-State (High Impedance)
ELECTRICAL SPECIFICATIONS
Nominal Frequency
Frequency Tolerance/Stability
10.000MHz
±50ppm over -40°C to +85°C (Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency Stability
over the Operating Temperature Range, Supply Voltage Change, Ouput Load Change, First Year Aging at
25°C, Shock, and Vibration)
3.3Vdc ±10%
2mA Maximum
90% of Vdd Minimum (IOH = -4mA)
10% of Vdd Maximum (IOL = +4mA)
6nSec Maximum (Measured at 20% to 80% of waveform)
50 ±10(%) (Measured at 50% of waveform)
15pF Maximum
CMOS
Tri-State (High Impedance)
90% of Vdd Minimum or No Connect to Enable Output, 10% of Vdd Maximum to Disable Output (High
Impedance)
10µA Maximum (Disabled Output: High Impedance)
1pSec Maximum (12kHz to 20MHz offset frequency)
0.2pSec Typical, 3pSec Maximum
2pSec Typical, 5pSec Maximum
3pSec Typical, 7pSec Maximum
40pSec Typical, 100pSec Maximum
10mSec Maximum
-55°C to +125°C
Supply Voltage
Input Current
Output Voltage Logic High (Voh)
Output Voltage Logic Low (Vol)
Rise/Fall Time
Duty Cycle
Load Drive Capability
Output Logic Type
Logic Control / Additional Output
Tri-State Input Voltage (Vih and Vil)
Standby Current
RMS Phase Jitter
Period Jitter (Deterministic)
Period Jitter (Random)
Period Jitter (RMS)
Period Jitter (pk-pk)
Start Up Time
Storage Temperature Range
ENVIRONMENTAL & MECHANICAL SPECIFICATIONS
ESD Susceptibility
Fine Leak Test
Flammability
Gross Leak Test
Mechanical Shock
Moisture Resistance
Moisture Sensitivity
Resistance to Soldering Heat
Resistance to Solvents
Solderability
Temperature Cycling
Vibration
MIL-STD-883, Method 3015, Class 1, HBM: 1500V
MIL-STD-883, Method 1014, Condition A
UL94-V0
MIL-STD-883, Method 1014, Condition C
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 1004
J-STD-020, MSL 1
MIL-STD-202, Method 210, Condition K
MIL-STD-202, Method 215
MIL-STD-883, Method 2003
MIL-STD-883, Method 1010, Condition B
MIL-STD-883, Method 2007, Condition A
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 1 of 5
EB13C3H1H-10.000M
OUTPUT WAVEFORM & TIMING DIAGRAM
TRI-STATE INPUT
V
IH
V
IL
CLOCK OUTPUT
V
OH
80% of Waveform
50% of Waveform
20% of Waveform
V
OL
OUTPUT DISABLE
(HIGH IMPEDANCE
STATE)
t
PLZ
Fall
Time
Rise
Time
T
W
T
Duty Cycle (%) = T
W
/T x 100
t
PZL
Test Circuit for CMOS Output
Oscilloscope
Frequency
Counter
+
+
Power
Supply
_
+
Voltage
Meter
_
Current
Meter
_
Supply
Voltage
(V
DD
)
Probe
(Note 2)
Output
0.01µF
(Note 1)
0.1µF
(Note 1)
Ground
C
L
(Note 3)
No Connect
or Tri-State
Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency
ceramic bypass capacitor close to the package ground and V
DD
pin is required.
Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth
(>300MHz) passive probe is recommended.
Note 3: Capacitance value C
L
includes sum of all probe and fixture capacitance.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 3 of 5
EB13C3H1H-10.000M
Recommended Solder Reflow Methods
T
P
Critical Zone
T
L
to T
P
Ramp-up
Ramp-down
Temperature (T)
T
L
T
S
Max
T
S
Min
t
S
Preheat
t 25°C to Peak
t
L
t
P
Time (t)
High Temperature Infrared/Convection
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
Additional Notes
3°C/second Maximum
150°C
175°C
200°C
60 - 180 Seconds
3°C/second Maximum
217°C
60 - 150 Seconds
260°C Maximum for 10 Seconds Maximum
250°C +0/-5°C
20 - 40 seconds
6°C/second Maximum
8 minutes Maximum
Level 1
Temperatures shown are applied to body of device.
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 4 of 5
EB13C3H1H-10.000M
Recommended Solder Reflow Methods
T
P
Critical Zone
T
L
to T
P
Ramp-up
Ramp-down
Temperature (T)
T
L
T
S
Max
T
S
Min
t
S
Preheat
t 25°C to Peak
t
L
t
P
Time (t)
Low Temperature Infrared/Convection 240°C
T
S
MAX to T
L
(Ramp-up Rate)
Preheat
- Temperature Minimum (T
S
MIN)
- Temperature Typical (T
S
TYP)
- Temperature Maximum (T
S
MAX)
- Time (t
S
MIN)
Ramp-up Rate (T
L
to T
P
)
Time Maintained Above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Target Peak Temperature (T
P
Target)
Time within 5°C of actual peak (t
p
)
Ramp-down Rate
Time 25°C to Peak Temperature (t)
Moisture Sensitivity Level
Additional Notes
5°C/second Maximum
N/A
150°C
N/A
60 - 120 Seconds
5°C/second Maximum
150°C
200 Seconds Maximum
240°C Maximum
240°C Maximum 1 Time / 230°C Maximum 2 Times
10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time
5°C/second Maximum
N/A
Level 1
Temperatures shown are applied to body of device.
Low Temperature Manual Soldering
185°C Maximum for 10 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)
High Temperature Manual Soldering
260°C Maximum for 5 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)
www.ecliptek.com | Specification Subject to Change Without Notice | Rev B 3/11/2011 | Page 5 of 5
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