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GSIB25XX

Description
3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size82KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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GSIB25XX Overview

3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GSIB2520, GSIB2540, GSIB2560, GSIB2580
www.vishay.com
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 2500 V
RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
~
~
~
~
Case Style GSIB-5S
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
GSIB-5S
25 A
200 V, 400 V, 600 V, 800 V
350 A
10 μA
1.0 V
150 °C
In-Line
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 12.5 V
T
J
max.
Diode variations
MECHANICAL DATA
Case:
GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 98 °C
(1)
T
A
= 25 °C
(2)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
GSIB2520
200
140
200
GSIB2540
400
280
400
25
3.5
350
500
- 55 to + 150
GSIB2560
600
420
600
GSIB2580
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB without heatsink
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
TEST CONDITIONS SYMBOL
12.5 A
T
A
= 25 °C
T
A
= 125 °C
V
F
I
R
GSIB2520
GSIB2540
1.00
10
350
GSIB2560
GSIB2580
UNIT
V
μA
Revision: 16-Aug-13
Document Number: 88646
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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