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GSIB2560

Description
3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size82KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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GSIB2560 Overview

3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GSIB2560 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current350 A
Number of components4
Maximum operating temperature150 °C
Maximum output current3.5 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
GSIB2520, GSIB2540, GSIB2560, GSIB2580
www.vishay.com
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 2500 V
RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
~
~
~
~
Case Style GSIB-5S
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
GSIB-5S
25 A
200 V, 400 V, 600 V, 800 V
350 A
10 μA
1.0 V
150 °C
In-Line
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 12.5 V
T
J
max.
Diode variations
MECHANICAL DATA
Case:
GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 98 °C
(1)
T
A
= 25 °C
(2)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
GSIB2520
200
140
200
GSIB2540
400
280
400
25
3.5
350
500
- 55 to + 150
GSIB2560
600
420
600
GSIB2580
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB without heatsink
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current at
rated DC blocking voltage per diode
TEST CONDITIONS SYMBOL
12.5 A
T
A
= 25 °C
T
A
= 125 °C
V
F
I
R
GSIB2520
GSIB2540
1.00
10
350
GSIB2560
GSIB2580
UNIT
V
μA
Revision: 16-Aug-13
Document Number: 88646
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

GSIB2560 Related Products

GSIB2560 GSIB2560-E3 GSIB2560-E345 GSIB25XX
Description 3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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