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HER1602G

Description
8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size210KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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HER1602G Overview

8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

HER1602G Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingPURE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current8 A
Maximum non-repetitive peak forward current125 A
HER1601G-HER1608G
16AMP. Glass Passivated High Efficient Rectifiers
TO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
Mechanical Data
Cases: TO-220AB molded plastic
Epoxy: UL 94V0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds .16”,(4.06mm) from case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
=100
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
Maximum DC Reverse Current
@T
A
=25
o
C at Rated DC Blocking Voltage
@ T
A
=125
o
C
Typical Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
HER HER HER HER HER HER HER HER
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
Units
V
V
V
A
A
50
35
50
100 200 300 400 600 800 1000
70 140 210 280 420 560 700
100 200 300 400 600 800 1000
16.0
125
1.0
1.3
10
400
50
80
1.5
-65 to +150
-65 to +150
80
50
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Trr
Cj
R
θJC
T
J
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mounted on Heatsink Size of 4 in x 6 in x 0.25 in Al-Plate.
http://www.luguang.cn
mail:lge@luguang.cn

HER1602G Related Products

HER1602G HER1601G HER1603G HER1604G HER1605G HER1606G HER1607G HER1608G
Description 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB

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