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HM621100ALJP-20

Description
Cache SRAM, 1MX1, 20ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
Categorystorage    storage   
File Size87KB,19 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HM621100ALJP-20 Overview

Cache SRAM, 1MX1, 20ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28

HM621100ALJP-20 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeSOJ
package instructionSOJ, SOJ28,.44
Contacts28
Reach Compliance Codeunknow
ECCN code3A991.B.2.B
Maximum access time20 ns
I/O typeSEPARATE
JESD-30 codeR-PDSO-J28
length18.17 mm
memory density1048576 bi
Memory IC TypeCACHE SRAM
memory width1
Number of functions1
Number of ports1
Number of terminals28
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX1
Output characteristics3-STATE
ExportableNO
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ28,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum standby current0.0001 A
Minimum standby current2 V
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm
HM621100A Series
1048576-word
×
1-bit High Speed CMOS Static RAM
Description
The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word
×
1-bit. It realizes
high speed access time (20/25/35 ns) and low power consumption, employing CMOS process technology and
high speed circuit designing technology. It is most advantageous for the field where high speed and high
density memory is required, such as the cache memory for main frame or 32-bit MPU. The HM621100A,
packaged in a 400-mil plastic SOJ is available for high density mounting.
Features
Single 5 V supply and high density 28-pin package (DIP and SOJ)
High speed
Access time: 20/25/35 ns (max)
Low power dissipation
Active mode: 350 mW (typ)
Standby mode: 100
µW
(typ)
Completely static memory required
No clock or timing strobe required
Equal access and cycle time
Directly TTL compatible
All inputs and outputs

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