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HFA06TB120SPBF

Description
8 A, 1200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size115KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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HFA06TB120SPBF Overview

8 A, 1200 V, SILICON, RECTIFIER DIODE

HFA06TB120SPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-263
package instructionLEAD FREE, D2PAK-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)2.8 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation62.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
Maximum reverse recovery time0.08 µs
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
HFA06TB120SPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 6 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for Q101 level
Available
RoHS*
COMPLIANT
Base
cathode
+
2
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
N/C
1
_
3
Anode
D
2
PAK
DESCRIPTION
HFA06TB120S is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 6 A continuous current, the
HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA06TB120S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
V
R
V
F
at 6 A at 25 °C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
dI
(rec)M
/dt (typical) at 125 °C
I
RRM
(typical)
1200 V
3.0 V
6A
26 ns
150 °C
116 nC
100 A/µs
4.4 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
1200
6
80
24
62.5
25
- 55 to + 150
W
°C
A
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94039
Revision: 22-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

HFA06TB120SPBF Related Products

HFA06TB120SPBF HFA06TB120STR HFA06TB120STRPBF HFB06TB120STR
Description 8 A, 1200 V, SILICON, RECTIFIER DIODE 8 A, 1200 V, SILICON, RECTIFIER DIODE 8 A, 1200 V, SILICON, RECTIFIER DIODE 8 A, 1200 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to incompatible conform to incompatible
Maker Vishay Vishay Vishay Vishay
Parts packaging code TO-263 TO-263 TO-263 TO-263
package instruction LEAD FREE, D2PAK-3 D2PAK-3 LEAD FREE, D2PAK-3 D2PAK-3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow compli compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LOW NOISE LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
application ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY ULTRA FAST SOFT RECOVERY
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 2.8 V 2.8 V 2.8 V 2.8 V
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Humidity sensitivity level 1 1 1 1
Maximum non-repetitive peak forward current 80 A 80 A 80 A 80 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 8 A 8 A 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 225 260 225
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 1200 V 1200 V 1200 V
Maximum reverse recovery time 0.08 µs 0.08 µs 0.08 µs 0.08 µs
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED 10 NOT SPECIFIED
Base Number Matches 1 1 1 1
Is Samacsys N N N -
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