Preliminary Data Sheet I0119J rev. A 11/00
IR060PM12CS02CB
FAST RECOVERY DIODE
Junction Size:
Wafer Size:
V
RRM
Class:
Passivation Process:
Reference IR Packaged Part:
Square 60 x 60 mils
4"
1200 V
Glassivated MOAT
Major Ratings and Characteristics
Parameters
V
FM
V
RRM
t
rr
Maximum Forward Voltage
Reverse Breakdown Voltage
Typical Reverse Recovery Time
Units
1.3 V
1200 V
55 ns
Test Conditions
T
J
= 25°C, I
F
= 2 A
T
J
= 25°C, I
RRM
= 10 µA
T
J
= 25°C, I
F
= 1A, -di/dt = 100A/µs
(1)
(1)
Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al (5 µm)
60 x 60 mils (see drawing)
100 mm, with std. < 110 > flat
260 µm, ± 10 µm
45 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in essicated
nitrogen, with no contamination
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1
IR060PM12CS02CB
Preliminary Data Sheet I0119J rev. A 11/00
Ordering Information Table
Device Code
IR
1
060
2
P
3
M
4
12
5
C
6
S02 CB
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device
: P = Wire Bondable Fast Recovery Diode (Platinum)
Passivation Process : M = Glassivated MOAT
Voltage code
Metallization
t
rr
code6
CB
CF
: Probed Uncut Die (wafer in box)
: Inked Probed Sawn wafer on film (blue tape)
: Code x 100 = V
RRM
: C = Aluminium (Anode) - Silver (Cathode)
Outline Table
INK DOT WITH INDICATION SITE
1524 - 50 (60 - 2)
+ 15
1044 - 5
(41 + 0.59 )
- 0.2
Ag
Al
+ 15
1044 - 5
(41 + 0.59 )
- 0.2
1524 - 50 (60 - 2)
5 TYP.
260
±
10
(10.23
±
0.39)
(0.2 typ.)
All dimensions are in microns (mils)
2
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