PD - 91397A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
IRHNA7260
IRHNA8260
N-CHANNEL
MEGA RAD HARD
200Volt, 0.070Ω, MEGA RAD HARD HEXFET
Ω
International Rectifier’s RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the RAD
HARD process utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments
Product Summary
Part Number
IRHNA7260
IRHNA8260
BV
DSS
200V
200V
R
DS(on)
0.070Ω
0.070Ω
I
D
43A
43A
Features:
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
43
27
172
300
2.4
±20
500
43
30
5.7
-55 to 150
Pre-Irradiation
IRHNA7260, IRHNA8260
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5 Sec.)
3.3 (typical)
g
www.irf.com
1
8/25/98
IRHNA7260, IRHNA8260 Devices
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
—
2.0
9
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.26
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
2.8
—
—
0.070
0.077
4.0
—
25
250
100
-100
290
42
120
50
200
200
130
—
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID =27A
VGS = 12V, ID = 43A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 27A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 43A
VDS = Max Rating x 0.5
VDD = 100V, ID = 43A,
RG = 2.35Ω
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
nA
nC
ns
nH
Measured from drain
Modified MOSFET symbol
lead, 6mm (0.25 in) from showing the internal induc-
package to center of die. tances.
Measured from source
lead, 6mm (0.25 in) from
package to source bond-
ing pad.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5300
1200
360
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
43
172
1.8
820
8.5
Test Conditions
Modified MOSFET symbol showing the integral
reverse p-n junction rectifier.
A
V
ns
µC
T
j
= 25°C, IS = 43A, VGS = 0V
Tj = 25°C, IF = 43A, di/dt
≤
100A/µs
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to PC board
Min Typ Max
—
—
—
1.6
0.42
—
Units
°C/W
Test Conditions
Soldered to a 1” sq. copper-clad board
2
www.irf.com
IRHNA7260, IRHNA8260 Devices
Radiation Performance of Rad Hard HEXFETs
Radiation Characteristics
Table 1, column 2, IRHNA8260. The values in Table 1
will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide a
Every manufacturing lot is tested in a low dose rate direct comparison.
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has High dose rate testing may be done on a special re-
imposed a standard gate condition of 12 volts per quest basis using a dose rate up to 1 x 10
12
Rads (Si)/
note 5 and a V
DS
bias condition equal to 80% of the Sec (See Table 2).
device rated voltage per note 6. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10
5
Rads International Rectifier radiation hardened HEXFETs
(Si) are identical and are presented in Table 1, col- have been characterized in heavy ion Single Event
umn 1, IRHNA7260. Post-irradiation limits of the de- Effects (SEE) environments. Single Event Effects char-
vices irradiated to1 x10
6
Rads (Si) are presented in acterization is shown in Table 3.
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
IRHNA7260 IRHNA8260
100K Rads (Si) 1000K Rads (Si)
Units
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
=27A
TC = 25°C, IS = 43A,V
GS
= 0V
Min
200
2.0
—
—
—
—
—
Max
—
4.0
100
-100
25
.070
1.8
Min
200
1.25
—
—
—
—
—
Max
—
4.5
100
-100
50
.110
1.8
V
nA
µA
Ω
V
Table 2. High Dose Rate
Parameter
V
DSS
IPP
di/dt
L1
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Drain-to-Source Voltage
Min Typ Max Min Typ Max
Units
Test Conditions
—
— 160 —
— 160
V
Applied drain-to-source voltage during
gamma-dot
— 21 —
—
—
21
A
Peak radiation induced photo-current
—
— 160 —
—
8.0 A/µsec Rate of rise of photo-current
1.0 —
— 20 —
—
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Ion
Cu
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
3x 10
5
Range
(µm)
~43
V
DS
Bias
(V)
180
V
GS
Bias
(V)
-5
www.irf.com
3
IRHNA7260, IRHNA8260 Devices
Pre-Irradiation
1000
100
5.0V
10
1
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
20µs PULSE WIDTH
T
J
= 25
°
C
100
10
1
5.0V
20µs PULSE WIDTH
T = 150 C
J
°
100
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 43A
I
D
, Drain-to-Source Current (A)
2.5
2.0
T
J
= 25
°
C
T
J
= 150
°
C
100
1.5
1.0
0.5
10
5
6
7
8
V DS = 50V
20µs PULSE WIDTH
10
11
9
12
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
IRHNA7260, IRHNA8260 Devices
Pre-Irradiation
10000
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 43 A
16
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
C, Capacitance (pF)
C
iss
6000
12
4000
C
oss
C
rss
8
2000
4
0
1
10
100
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
240
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
100
10us
T
J
= 150
°
C
10
100us
T
J
= 25
°
C
1
10
1ms
0.1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
Microchip MCU
京公网安备 11010802033920号
EEWORLD
