AF9945NSA datasheet, PDF - EEWORLD Datasheet

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AF9945NSA: DescriptionPower Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8; CategoryDiscrete semiconductor The transistor; File Size453KB，5 Pages; ManufacturerIntegrated Circuit Systems（IDT ）

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AF9945NSA Overview

Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

AF9945NSA Parametric

Parameter Name	Attribute value
Maker	Integrated Circuit Systems（IDT ）
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3.3 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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AF9945N

N-Channel Enhancement Mode Power MOSFET

Features

- Low On-resistance

- Single Drive Requirement

- Surface Mount Package

General Description

The advanced power MOSFET provides the designer

with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Product Summary

DSS

(V)

DS(ON)

(mΩ)

100

(A)

3.3

Pin Assignments

Pin Descriptions

Pin Name

S1/2

G1/2

D1/2

Description

Source

Gate

Drain

SO-8

Ordering information

A X

Feature

F :MOSFET

9945N X X X

Package

S: SO-8

Lead Free

Blank : Normal

L : Lead Free Package

Packing

Blank : Tube or Bulk

A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.1 Sep 5, 2005

1/5

AF9945NSA Related Products

	AF9945NSA	AF9945NS	AF9945NSLA	AF9945NSL
Description	Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8	Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8	Power Field-Effect Transistor, 3.3A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8
Maker	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）	Integrated Circuit Systems（IDT ）
Parts packaging code	SOT	SOT	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8	8
Reach Compliance Code	unknow	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (ID)	3.3 A	3.3 A	3.3 A	3.3 A
Maximum drain-source on-resistance	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	2	2	2	2
Number of terminals	8	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A	20 A	20 A	20 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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