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IRLI3803-112PBF

Description
Power Field-Effect Transistor, 76A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size109KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRLI3803-112PBF Overview

Power Field-Effect Transistor, 76A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRLI3803-112PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)610 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)76 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)470 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 9.1320B
IRLI3803
HEXFET
®
Power MOSFET
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
…
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 30V
R
DS(on)
= 0.006Ω
G
I
D
= 76A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
†
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
‚†
Avalanche Current†
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
76
54
470
63
0.42
±16
610
71
6.3
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
––––
Max.
2.4
65
Units
°C/W
8/25/97
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