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SD103CW

Description
Schottky diodes
CategoryDiscrete semiconductor   
File Size160KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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SD103CW Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: SD103CW


product features:


Low Forward Voltage Drop


Guard Ring Construction for Transient Protection


Negligible Reverse Recovery Time


Low Capacitance



Product parameters:


Pd power dissipation: 400mW


Io rectified current:


VR reverse working voltage: 40V


VF forward buck: 0.6V


IR reverse current: 5uA


Trr Forward recovery time: 10ns



Package: SOD-123

SD103CW Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
SD103AW-SD103CW
SCHOTTKY BARRIER DIODE
SOD-123
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Negligible Reverse Recovery Time
Low Capacitance
MARKING:
SD103AW:S4
SD103BW:S5
SD103CW:S6
MAXIMUM RATINGS ( T
a
=25
unless otherwise noted )
Symbol
V
RRM
V
RWM
V
R(RMS)
I
FM
I
FSM
P
D
R
ΘJA
T
j
T
stg
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-repetitive Peak Forward Surge Current @ t≤1s
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
SD103AW
40
28
SD103BW
30
21
350
2
400
250
125
-55~+150
SD103CW
20
14
Unit
V
V
mA
A
mW
℃/W
ELECTRICAL CHARACTERISTICS(T
a
=25
unless otherwise specified)
Parameter
Reverse voltage
Symbol
I
R
=100μA
V
(BR)
V
R
=30V
Reverse current
I
R
V
R
=20V
V
R
=10V
Forward voltage
Total capacitance
Reverse recovery time
V
F
C
tot
t
rr
I
F
=20mA
I
F
=200mA
V
R
=0V,f=1MHz
I
F
= I
R
=200mA, I
rr
=0.1×I
R
, R
L
=100Ω
50
10
Test conditions
SD103AW
SD103BW
SD103CW
SD103AW
SD103BW
SD103CW
0.37
0.6
V
pF
ns
5
μA
Min
40
30
20
V
Typ
Max
Unit
C,Mar,2012
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