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KP500

Description
Ordinary power thyristor
CategoryDiscrete semiconductor   
File Size155KB,2 Pages
ManufacturerYANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD.
Download Datasheet View All

KP500 Overview

Ordinary power thyristor

Features

Product Name: Ordinary Power Thyristor


Product model: KP500


Product Usage:


High-power thyristors for phase control


Features:


Fully diffused structure, center-amplified gate structure, blocking voltage up to 3000 V, high dV/dt capacity, full press-fit



product data:


Forward repetitive peak voltage VDRM/reverse repetitive peak voltage VRRM: 600-3000V


Non-repetitive surge current ITSM: 8.0E3A


Peak on-state voltage drop VTM: ≤2.0V


Average on-state current IT: 600A


Size: Ф38.1mm



Package: KT40



KP500 Preview

Download Datasheet
扬州中芯晶来半导½制造有限公司
YANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD
1.5
KP500
功率晶闸管
■用途
用于相½控制的大功率晶闸管
■特点
全扩散结构、中心放大门极结构、阻断电压至3000
V、
高容量
dV/dt、全压接式
600 V- 3000 V, 500 A
KT40
■电特性和额定值
断态特性
阻断电压
V
RRM (1)
V
DRM (1)
V
RSM (1)
700
900
1325
1525
1800
2200
2800
3200
φ34
26±1
φ52
2-φ3.5×1.9
4.75
0.8min
20
o
±5
o
■产品外½尺寸
600
600
600
800
800
800
1200
1200
1200
1400
1400
1400
1600
1600
1600
2000
2000
2000
2600
2600
2600
3000
3000
3000
V
RRM
=
反向重复峰值电压
V
DRM
=
正向重复峰值电压
V
RSM
=
反向不重复峰值电压
(2)
反向和正向重复峰值电流
电压上升率额定值
注:
(1) 50 Hz/60 Hz
正弦波,温度范围
-40
℃~
+125
℃.
(2) 10 ms脉½
(3)T
j
=125
℃.
(4) 67%额定电压V
DRM
,门极开路T
j
=125
℃.
(5)
不重复值
(6)此电流上升率根据EIA/NIMA标准RS-397定义及条件。
φ34
I
RRM
/
I
DRM
dV/dt
(4)
15 mA
50 mA
(3)
300 V/s
φ57.2
35.5
通态特性
符号
I
T(AV)
I
TRMS
I
TSM
I
2
t
I
L
I
H
V
TM
di/dt
di/dt
最小值
最大值
500
790
9.0×10
3
8.0×10
3
2.0×10
5
200
200
2.2
300
150
1.4
典型值
单½
A
A
A
A
A
2
s
mA
mA
V
A/s
A/s
通态平均电流
通态电流方均根值
不重复浪涌电流
I
2
t值
擎½电流
维持电流
峰值通态压降
电流上升率
(5),( 6)
电流上升率
(6)
正弦半波导通角,Tc=65℃
8.3 ms,
正弦半波导通角,T
j
=125℃
10 ms,
正弦半波导通角,
T
j
=125℃
8.3 ms
10ms
V
D
=24 V;
R
L
=12
V
D
=24 V;
I
=2.5 A
I
TM
=1570 A;
占空比≤
0.01%
不重复
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