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BCP28

Description
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
CategoryDiscrete semiconductor    The transistor   
File Size154KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BCP28 Overview

PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)

BCP28 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
Parts packaging codeSOT-223
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)4000
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max1 V
PNP Silicon Darlington Transistors
BCP 28
BCP 48
q
For general AF applications
q
High collector current
q
High current gain
q
Complementary types: BCP 29/49 (NPN)
Type
BCP 28
BCP 48
Marking
BCP 28
BCP 48
Ordering Code
(tape and reel)
Q62702-C2134
Q62702-C2135
Pin Configuration
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BCP 48
BCP 28
30
40
10
60
80
10
500
800
100
200
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
R
th JA
R
th JS
75
17
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91

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Description PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
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