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Q62702-C2135

Description
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
File Size154KB,5 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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Q62702-C2135 Overview

PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)

PNP Silicon Darlington Transistors
BCP 28
BCP 48
q
For general AF applications
q
High collector current
q
High current gain
q
Complementary types: BCP 29/49 (NPN)
Type
BCP 28
BCP 48
Marking
BCP 28
BCP 48
Ordering Code
(tape and reel)
Q62702-C2134
Q62702-C2135
Pin Configuration
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
1)
2)
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BCP 48
BCP 28
30
40
10
60
80
10
500
800
100
200
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
R
th JA
R
th JS
75
17
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91

Q62702-C2135 Related Products

Q62702-C2135 BCP28 BCP48 Q62702-C2134
Description PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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