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HS2D

Description
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size184KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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HS2D Overview

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA

HS2A-HS2M
2.0AMP. High Efficient Surface Mount Rectifiers
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
Features
Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
o
260 C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V0
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.209(5.30)
.201(5.10)
.008(.20)
.004(.10)
Mechanical Data
Cases: Molded plastic
Terminals:
Pure tin plated, lead free
Polarity: Indicated by cathode band
Packing: 12mm tape per
Weight: 0.093 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
@
T
A
=25
o
C
at Rated DC Blocking Voltage
@ T
A
=125
o
C
Maximum Reverse Recovery Time
( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Symbol
HS
2A
HS
2B
HS
2D
HS
2F
HS
2G
HS
2J
HS
2K
HS
2M
Units
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
50
35
50
400 200 300 400 600 800 1000
70 140 210 280 420 560 700
100 200 300 400 600 800 1000
2.0
50
1.0
1.3
5.0
150
50
50
75
30
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
80
-55 to +150
-55 to +150
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied V
R
=4.0 Volts.
3.Mounted on P.C.Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Area.
http://www.luguang.cn
mail:lge@luguang.cn

HS2D Related Products

HS2D HS2A HS2B HS2F HS2G HS2J HS2K HS2M
Description 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
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