BCP51-16 datasheet, PDF - EEWORLD Datasheet

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BCP51-16: Description1 A, 45 V, PNP, Si, POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size47KB，5 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BCP51-16 Overview

1 A, 45 V, PNP, Si, POWER TRANSISTOR

BCP51-16 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz

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BCP51...BCP53

PNP Silicon AF Transistors

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP54...BCP56 (NPN)

VPS05163

Type

BCP51

BCP51-10

BCP51-16

BCP52

BCP52-10

BCP52-16

BCP53

BCP53-10

BCP53-16

Marking

BCP 51

1=B

BCP 51-10 1 = B

BCP 51-16 1 = B

BCP 52

1=B

BCP 52-10 1 = B

BCP 52-16 1 = B

BCP 53

1=B

BCP 53-10 1 = B

BCP 53-16 1 = B

Pin Configuration

2=C

3=E

4=C

Package

SOT223

Nov-29-2001

BCP51-16 Related Products

	BCP51-16	BCP51-10	BCP52	BCP52-10	BCP53
Description	1 A, 45 V, PNP, Si, POWER TRANSISTOR	1 A, 45 V, PNP, Si, POWER TRANSISTOR	1 A, 45 V, PNP, Si, POWER TRANSISTOR	1 A, 45 V, PNP, Si, POWER TRANSISTOR	1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
package instruction	SMALL OUTLINE, R-PDSO-G4	SOT-223, 4 PIN	SOT-223, 4 PIN	SOT-223, 4 PIN	SOT-223, 4 PIN
Contacts	4	4	4	4	4
Reach Compliance Code	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maker	Infineon	-	Infineon	Infineon	-
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-
Maximum collector current (IC)	1 A	1 A	1 A	1 A	-
Collector-emitter maximum voltage	45 V	45 V	60 V	60 V	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	100	63	40	63	-
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	-
Number of components	1	1	1	1	-
Number of terminals	4	4	4	4	-
Maximum operating temperature	150 °C	140 °C	140 °C	140 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
Polarity/channel type	PNP	PNP	PNP	PNP	-
Maximum power dissipation(Abs)	1.5 W	1.5 W	1.5 W	1.5 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	YES	YES	YES	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-
Terminal location	DUAL	DUAL	DUAL	DUAL	-
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	125 MHz	125 MHz	125 MHz	125 MHz	-
Parts packaging code	-	SOT-223	SOT-223	SOT-223	SOT-223
Base Number Matches	-	1	1	-	1

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