BUK6207-30C datasheet, PDF - EEWORLD Datasheet

BUK6207-30C: DescriptionTRANSISTOR 90 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK6207-30C Overview

TRANSISTOR 90 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power

Parameter Name	Attribute value
Maker	NXP
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	153 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	90 A
Maximum drain-source on-resistance	0.0095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	455 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

Leading-edge Automotive Power

MOSFETs

Next Generation MOSFETs for a wide range

of Automotive Applications

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