RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | ROHM Semiconductor |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.05 A |
| Collector-based maximum capacity | 1 pF |
| Collector-emitter maximum voltage | 19 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 39 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 1100 MHz |
| 2SC3082K | 2SC2059K | 2SC1198K | RXT-A64 | |
|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | Small Signal Bipolar Transistor, 0.02A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SMT, SC-59, 3 PIN | Transistor | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
| Is it Rohs certified? | conform to | conform to | incompatible | conform to |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | , | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | compli | compli | compli | unknown |
| Maximum collector current (IC) | 0.05 A | 0.02 A | 0.5 A | 0.5 A |
| Configuration | SINGLE | SINGLE | Single | DARLINGTON |
| Minimum DC current gain (hFE) | 39 | 39 | 390 | 20000 |
| Polarity/channel type | NPN | NPN | NPN | PNP |
| Maximum power dissipation(Abs) | 0.2 W | 0.15 W | 0.2 W | 1 W |
| surface mount | YES | YES | YES | YES |
| Nominal transition frequency (fT) | 1100 MHz | 500 MHz | 100 MHz | 125 MHz |
| ECCN code | EAR99 | EAR99 | - | EAR99 |
| Collector-emitter maximum voltage | 19 V | 20 V | - | 30 V |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | - | R-PSSO-F3 |
| Number of components | 1 | 1 | - | 1 |
| Number of terminals | 3 | 3 | - | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| Certification status | Not Qualified | Not Qualified | - | Not Qualified |
| Terminal form | GULL WING | GULL WING | - | FLAT |
| Terminal location | DUAL | DUAL | - | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER | - | SWITCHING |
| Transistor component materials | SILICON | SILICON | - | SILICON |
京公网安备 11010802033920号
EEWORLD
