2SC5200LR datasheet, PDF - EEWORLD Datasheet

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2SC5200LR: DescriptionPower Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3PL, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size92KB，3 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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2SC5200LR Overview

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3PL, 3 PIN

2SC5200LR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code	TO-3PL
package instruction	LEAD FREE, TO-3PL, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	230 V
Configuration	SINGLE
Minimum DC current gain (hFE)	55
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER

APPLICATIONS

FEATURES

* Recommended for 100W High Fidelity Audio Frequency

Amplifier Output Stage.

* Complementary to UTC 2SA1943

TO-3PL

*Pb-free plating product number: 2SC5200L

ABSOLUTE MAXIMUM RATINGS

= 25℃)

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature Range

SYMBOL

CBO

CEO

EBO

Tstg

RATINGS

230

1.5

150

-55 ~ 150

UNIT

℃

ELECTRICAL CHARACTERISTICS

(Tc=25℃)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Base -Emitter Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Transition Frequency

Collector Output Capacitance

SYMBOL

(BR) CEO

CE (sat)

CBO

EBO

FE1

FE2

TEST CONDITIONS

= 50mA, I

= 8A

= 0.8A

= 5V, I

= 7A

= 230V, I

= 5V, I

= 1A

= 5V, I

= 7A

= 5V, I

= 1A

= 10V, I

=0, f=1MHz

MIN

230

TYP

0.40

1.0

MAX

3.0

1.5

5.0

160

UNIT

μA

200

MHz

Note: h

FE (1)

Classification, R : 55 ~ 110, O : 80 ~ 160

CLASSIFICATION OF HFE1

RANK

Range

55 ~ 110

80 ~ 160

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R214-005,A

2SC5200LR Related Products

	2SC5200LR	2SC5200O	2SC5200R	2SC5200LO	2SC5200L
Description	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3PL, 3 PIN	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PL, 3 PIN	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PL, 3 PIN	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3PL, 3 PIN	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-3PL, 3 PIN
Parts packaging code	TO-3PL	TO-3PL	TO-3PL	TO-3PL	TO-3PL
package instruction	LEAD FREE, TO-3PL, 3 PIN	FLANGE MOUNT, R-PSFM-T3	TO-3PL, 3 PIN	LEAD FREE, TO-3PL, 3 PIN	LEAD FREE, TO-3PL, 3 PIN
Contacts	3	3	3	3	3
Reach Compliance Code	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	15 A	15 A	15 A	15 A	15 A
Collector-emitter maximum voltage	230 V	230 V	230 V	230 V	230 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	55	80	55	80	35
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz
Is it Rohs certified?	conform to	-	-	conform to	conform to
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	-	1	1	1	1

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